5秒后页面跳转
IXGT16N170 PDF预览

IXGT16N170

更新时间: 2024-11-05 11:14:11
品牌 Logo 应用领域
IXYS 双极性晶体管高压
页数 文件大小 规格书
2页 102K
描述
High Voltage IGBT

IXGT16N170 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-247AD
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:not_compliant风险等级:5.66
外壳连接:COLLECTOR最大集电极电流 (IC):32 A
集电极-发射极最大电压:1700 V配置:SINGLE
最大降落时间(tf):1100 ns门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-247AD
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):190 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):1600 ns
标称接通时间 (ton):90 nsBase Number Matches:1

IXGT16N170 数据手册

 浏览型号IXGT16N170的Datasheet PDF文件第2页 
Advance Technical Data  
IXGH 16N170 VCES  
IXGT 16N170 IC25  
= 1700 V  
32 A  
High Voltage  
IGBT  
=
VCE(sat) = 3.5 V  
tfi(typ)  
= 290 ns  
Symbol  
TestConditions  
Maximum Ratings  
TO-268(IXGT)  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1700  
1700  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
C (TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
32  
16  
80  
A
A
A
TO-247AD(IXGH)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 10 Ω  
I
= 40  
A
CGlaE mped inductive load  
@ 0C.8M VCES  
190  
TAB)  
(RBSOA)  
G
C
E
PC  
TC = 25°C  
W
G = Gate,  
E=Emitter,  
Features  
C = Collector,  
TAB = Collector  
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
z
International standard packages  
JEDEC TO-268 and  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
JEDEC TO-247 AD  
z
z
Maximum Tab temperature for soldering SMD devices for 10 s  
260  
°C  
High current handling capability  
MOS Gate turn-on  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
- drive simplicity  
z
z
Rugged NPT structure  
Molding epoxies meet UL 94 V-0  
flammability classification  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
Applications  
z
Capacitor discharge & pulser circuits  
z
AC motor speed control  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
z
DC servo and robot drives  
z
DC choppers  
z
Uninterruptible power supplies (UPS)  
BVCES  
VGE(th)  
I
= 250 µA, VGE = 0 V  
1700  
3.0  
V
z
ICC = 250 µA, VCE = VGE  
5.0  
V
Switched-mode and resonant-mode  
power supplies  
ICES  
VCE = 0.8 • VCES  
VGE = 0 V  
T = 25°C  
TJJ = 125°C  
50  
µA  
µA  
Advantages  
500  
z
High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
nA  
z
Suitable for surface mounting  
z
VCE(sat)  
IC = IC90, VGE = 15 V  
T = 25°C  
TJJ = 125°C  
2.7  
3.3  
3.5  
V
V
Easy to mount with 1 screw,  
(isolated mounting screw hole)  
© 2003 IXYS All rights reserved  
DS98996(01/03)  

与IXGT16N170相关器件

型号 品牌 获取价格 描述 数据表
IXGT16N170A IXYS

获取价格

High Voltage IGBT
IXGT16N170A LITTELFUSE

获取价格

功能与特色: 应用:?
IXGT16N170AH1 IXYS

获取价格

High Voltage IGBT
IXGT16N170AH1 LITTELFUSE

获取价格

功能与特色: 应用:?
IXGT20N100 IXYS

获取价格

IGBT
IXGT20N100 LITTELFUSE

获取价格

IXYS系列穿通型(PT)IGBT具有高增益、极快速切换和低传导损耗等优点。 这些产品针对
IXGT20N120 IXYS

获取价格

IGBT
IXGT20N120B IXYS

获取价格

High Voltage IGBT
IXGT20N120B LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGT20N120BD1 IXYS

获取价格

Insulated Gate Bipolar Transistor, 40A I(C), 1200V V(BR)CES, N-Channel, TO-268AA, TO-268,