IXGH 20N100 VCES
IXGT 20N100 IC25
= 1000 V
40 A
IGBT
=
VCE(sat) = 3.0 V
tfi(typ)
= 280 ns
Preliminary data
Symbol
TestConditions
MaximumRatings
TO-268
(IXGT)
VCES
VCGR
TJ = 25°C to 150°C
1000
1000
V
G
E
TJ = 25°C to 150°C; RGE = 1 MW
V
VGES
VGEM
Continuous
Transient
±20
±30
V
V
(TAB)
TO-247 AD (IXGH)
IC25
IC90
ICM
TC = 25°C
40
20
80
A
A
A
TC = 90°C
TC = 25°C, 1 ms
SSOA
(RBSOA)
VGE= 15 V, TVJ = 125°C, RG = 47 W
Clamped inductive load, L = 100 mH
ICM = 40
@ 0.8 VCES
A
G
C
E
C (TAB)
PC
TC = 25°C
150
W
TJ
-55 ... +150
150
°C
°C
°C
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
TJM
Tstg
-55 ... +150
Maximum Lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s
300
260
°C
°C
Features
• Internationalstandardpackages
JEDEC TO-268 surface and
JEDEC TO-247 AD
Md
Mountingtorque(M3)
1.13/10 Nm/lb.in.
Weight
TO-247 AD
TO-268
6
4
g
g
• Highcurrenthandlingcapability
• MOS Gate turn-on
- drive simplicity
Applications
• AC motor speed control
• DC servo and robot drives
• DC choppers
• Uninterruptiblepowersupplies(UPS)
• Switched-modeandresonant-mode
powersupplies
Symbol
TestConditions
CharacteristicValues
(TJ = 25°C, unless otherwise specified)
min. typ. max.
BVCES
VGE(th)
IC = 1 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
1000
2.5
V
V
5
• Capacitordischarge
ICES
VCE = VCES
VGE = 0 V
TJ = 25°C
TJ = 125°C
250
1
mA
mA
Advantages
• High power density
IGES
VCE = 0 V, VGE = ±20 V
±100
nA
V
• Suitableforsurfacemounting
• Easy to mount with 1 screw,
(isolatedmountingscrewhole)
VCE(sat)
IC = IC90, VGE = 15 V
2.2
3.0
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98620B(7/00)
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