5秒后页面跳转
IXGT15N120B PDF预览

IXGT15N120B

更新时间: 2024-02-01 05:53:48
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
4页 172K
描述
HiPerFAST IGBT

IXGT15N120B 技术参数

是否Rohs认证: 不符合生命周期:Not Recommended
包装说明:SMALL OUTLINE, R-PSSO-G2Reach Compliance Code:compliant
风险等级:5.73其他特性:LOW SWITCHING LOSSES
外壳连接:COLLECTOR最大集电极电流 (IC):30 A
集电极-发射极最大电压:1200 V配置:SINGLE
最大降落时间(tf):190 ns门极发射器阈值电压最大值:5 V
门极-发射极最大电压:20 VJEDEC-95代码:TO-268AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):150 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):470 ns标称接通时间 (ton):43 ns
Base Number Matches:1

IXGT15N120B 数据手册

 浏览型号IXGT15N120B的Datasheet PDF文件第2页浏览型号IXGT15N120B的Datasheet PDF文件第3页浏览型号IXGT15N120B的Datasheet PDF文件第4页 
HiPerFASTTM IGBT  
VCES = 1200 V  
IXGH 15N120B  
IXGT 15N120B  
IC25  
=
30 A  
VCE(sat) = 3.2 V  
tfi(typ) = 160 ns  
TO-268(IXGT)  
Symbol  
TestConditions  
Maximum Ratings  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
1200  
1200  
V
V
G
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
E
C (TAB)  
TAB)  
IC25  
IC90  
ICM  
TC = 25°C  
TC = 90°C  
TC = 25°C, 1 ms  
30  
15  
60  
A
A
A
TO-247AD(IXGH)  
SSOA  
V
= 15 V, TVJ = 125°C, RG = 10 Ω  
I
= 40  
A
(RBSOA)  
CGlaE mped inductive load  
@ 0C.8M VCES  
150  
G
C
E
PC  
TC = 25°C  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate,  
C = Collector,  
TAB = Collector  
E = Emitter,  
Maximum Lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Maximum Tab temperature for soldering SMD devices for 10 s  
260  
°C  
Features  
z
International standard packages  
JEDEC TO-268 surface and  
JEDEC TO-247 AD  
Low switching losses, low V(sat)  
MOS Gate turn-on  
- drive simplicity  
Md  
Mounting torque (M3)  
1.13/10Nm/lb.in.  
Weight  
TO-247 AD  
TO-268  
6
4
g
g
z
z
Applications  
z
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
AC motor speed control  
z
DC servo and robot drives  
z
DC choppers  
z
Uninterruptible power supplies (UPS)  
BVCES  
VGE(th)  
I
= 250 µA, VGE = 0 V  
1200  
2.5  
V
ICC = 250 µA, V = VGE  
5
V
z
Switched-mode and resonant-mode  
CE  
power supplies  
ICES  
VCE = V  
T = 25°C  
TJJ = 125°C  
100  
µA  
VGE = 0CVES  
3.5 mA  
Advantages  
z
High power density  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
3.2  
nA  
z
Suitable for surface mounting  
z
VCE(sat)  
IC = IC90, VGE = 15 V  
V
V
Easy to mount with 1 screw,  
(isolated mounting screw hole)  
TJ = 125°C  
2.5  
98659-A (7-02)  
© 2002 IXYS All rights reserved  

与IXGT15N120B相关器件

型号 品牌 获取价格 描述 数据表
IXGT15N120B2D1 IXYS

获取价格

HiPerFAST IGBT
IXGT15N120B2D1 LITTELFUSE

获取价格

GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 30
IXGT15N120BD1 IXYS

获取价格

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGT15N120C IXYS

获取价格

IGBT Lightspeed Series
IXGT15N120CD1 IXYS

获取价格

Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGT16N170 IXYS

获取价格

High Voltage IGBT
IXGT16N170 LITTELFUSE

获取价格

功能与特色: 应用:?
IXGT16N170A IXYS

获取价格

High Voltage IGBT
IXGT16N170A LITTELFUSE

获取价格

功能与特色: 应用:?
IXGT16N170AH1 IXYS

获取价格

High Voltage IGBT