Datasheet > IXGT15N120B2D1

IXGT15N120B2D1

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
3页	136K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

IXGT15N120B2D1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.65
Base Number Matches：	1

IXGT15N120B2D1 数据手册

Advance Technical Information

HiPerFAST^TMIGBT

V_CES

I_C25

=1200 V

= 30 A

IXGH15N120B2D1

IXGT15N120B2D1

V_CE(sat)= 3.3 V

Optimized for 10-20 KHz hard

switching and up to 100 KHz

resonant switching

t_fi(typ)

= 137 ns

Symbol

Test Conditions

Maximum Ratings

TO-247AD

(IXGH)

V_CES

V_CGR

T_J= 25°C to 150°C

1200

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

TAB

I_C25

I_C90

I_CM

T_C= 25°C

TO-268

(IXGT)

T_C= 90°C

T_C= 25°C, 1 ms

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

I_CM= 40

C (TAB)

(RBSOA)

Clamped inductive load

@ 0.8 V_CES

P_C

T_C= 25°C

192

G = Gate

C = Collector

E = Emitter

TAB = Collector

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Features

M_d

Mounting torque (TO-247)

1.13/10 Nm/lb.in.

^zInternational standard packages:

JEDEC TO-247AD & TO-268

^zIGBT and anti-parallel FRED in one

package

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

260

6 / 4

°C

Maximum tab temperature

soldering SMD devices for 10s

°C

^zMOS Gate turn-on

- drive simplicity

^zFast Recovery Expitaxial Diode (FRED)

- soft recovery with low I_RM

Weight

TO-247AD / TO-268

Applications

AC motor speed control

DC servo and robot drives

DC choppers

Uninterruptible power supplies (UPS)

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min.

Typ.

Max.

BV_CES

V_GE(th)

I_C= 250 μA, V_GE= 0 V

I_C= 250 μA, V_CE= V_GE

1200

2.5

5.0

Switch-mode and resonant-mode

power supplies

I_CES

V_CE= V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

100

3.5

μA

Advantages

^zSaves space (two devices in one

package)

Easy to mount with 1 screw

I_GES

V_CE= 0 V, V_GE= 20 V

I_C= I_CE90, V_GE= 15

100

3.3

V_CE(sat)

(isolated mounting screw hole)

Reduces assembly time and cost

T_J= 125°C

2.7

DS99492(09/05)

12 3

中文翻译

下载PDF

与IXGT15N120B2D1相关器件

型号	品牌	获取价格	描述	数据表
IXGT15N120BD1	IXYS	获取价格	Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGT15N120C	IXYS	获取价格	IGBT Lightspeed Series
IXGT15N120CD1	IXYS	获取价格	Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGT16N170	IXYS	获取价格	High Voltage IGBT
IXGT16N170	LITTELFUSE	获取价格	功能与特色: 应用:?
IXGT16N170A	IXYS	获取价格	High Voltage IGBT
IXGT16N170A	LITTELFUSE	获取价格	功能与特色: 应用:?
IXGT16N170AH1	IXYS	获取价格	High Voltage IGBT
IXGT16N170AH1	LITTELFUSE	获取价格	功能与特色: 应用:?
IXGT20N100	IXYS	获取价格	IGBT