Datasheet > IXGR72N60B3H1

IXGR72N60B3H1

更新时间： 2023-12-06 20:13:18

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	275K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

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中文翻译

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数据手册

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IXGR72N60B3H1 数据手册

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 600V

= 40A

£ 1.80V

= 92ns

GenX3 600V

IXGR72N60B3H1

IGBT w/ Diode

(Electrically Isolated Tab)

Medium Speed Low Vsat PT IGBT

for 5-40 kHz Switching

ISOPLUS247^TM

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25C to 150C

600

V_CGR

T_J= 25C to 150C, R_GE= 1M

Isolated Tab

V_GES

V_GEM

Continuous

Transient

20

30

G = Gate

= Collector

I_C25

I_C110

I_F110

I_CM

T_C= 25C

E = Emitter

T_C= 110C

T_C= 25C, 1ms

450

Features

SSOA

V_GE= 15V, T_VJ= 125C, R_G= 3

I_CM= 240

(RBSOA)

Clamped Inductive Load

V_CE V_CES



Silicon Chip on Direct-Copper Bond

(DCB) Substrate

Isolated Mounting Surface

Optimized for Low Conduction and

Switching Losses

2500V~ Electrical Isolation

Square RBSOA

Anti-Parallel Ultra Fast Diode

P_C

T_C= 25C

200



T_J

-55 ... +150

150

C

T_JM

T_stg



-55 ... +150

V_ISOL

F_C

50/60 Hz, 1 Minute

Mounting Force

2500

20..120/4.5..27

N/lb

T_L

Maximum Lead Temperature for Soldering

1.6mm (0.062 in.) from Case for 10s

300

260

°C

Advantages

T_SOLD



High Power Density

Low Gate Drive Requirement

Weight



Applications



Power Inverters

UPS

Motor Drives

SMPS

PFC Circuits

Battery Chargers

Welding Machines

Lamp Ballasts

Symbol

Test Conditions

Characteristic Values



(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



V_GE(th)

I_CES

I_C= 250A, V_CE= V_GE

3.0

5.0



V_CE= V_CES, V_GE= 0V

300 A



T_J= 125C



I_GES

V_CE= 0V, V_GE= 20V

100 nA



V_CE(sat)

I_C= 60A, V_GE= 15V, Note 1

I_C= 120A

1.50

1.75

1.80

DS99875C(01/16)

12 3 4 5 6 7 8

中文翻译

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