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IXGR72N60C3D1 PDF预览

IXGR72N60C3D1

更新时间: 2024-11-06 14:56:35
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 240K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGR72N60C3D1 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:unknown
风险等级:5.39JESD-609代码:e1
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)

IXGR72N60C3D1 数据手册

 浏览型号IXGR72N60C3D1的Datasheet PDF文件第2页浏览型号IXGR72N60C3D1的Datasheet PDF文件第3页浏览型号IXGR72N60C3D1的Datasheet PDF文件第4页浏览型号IXGR72N60C3D1的Datasheet PDF文件第5页浏览型号IXGR72N60C3D1的Datasheet PDF文件第6页浏览型号IXGR72N60C3D1的Datasheet PDF文件第7页 
TM  
VCES  
IC110  
VCE(sat)  
tfi(typ)  
= 600V  
= 35A  
£ 2.7V  
= 55ns  
GenX3 600V IGBT  
IXGR72N60C3D1  
with Diode  
High-Speed Low-Vsat PT IGBT  
40-100 kHz Switching  
ISOPLUS 247TM  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
Isolated Tab  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (Limited by Leads)  
TC = 110°C  
TC = 110°C  
75  
35  
A
A
A
A
G = Gate  
E = Emitter  
C = Collector  
36  
TC = 25°C, 1ms  
400  
IA  
TC = 25°C  
TC = 25°C  
50  
A
Features  
EAS  
500  
mJ  
z Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
z Optimized for Low Switching Losses  
z Square RBSOA  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 2Ω  
Clamped Inductive Load  
ICM = 150  
A
(RBSOA)  
VCE VCES  
PC  
TC = 25°C  
200  
W
z Isolated Mounting Surface  
z Anti-Parallel Ultra Fast Diode  
z Avalanche Rated  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
-55 ... +150  
z 2500V Electrical Isolation  
VISOL  
50/60 Hz, RMS, t = 1Minute  
2500  
3000  
V~  
V~  
IISOL < 1mA  
t = 20 Seconds  
Advantages  
FC  
Mounting Force  
20..120/4.5..27  
N/lb  
z High Power Density  
z Low Gate Drive Requirement  
TL  
Maximum Lead Temperature for Soldering  
1.6mm (0.062 in.) from Case for 10s  
300  
260  
°C  
°C  
TSOLD  
Applications  
Weight  
5
g
z High Frequency Power Inverters  
z UPS  
z Motor Drives  
z SMPS  
z PFC Circuits  
Symbol  
Test Conditions  
Characteristic Values  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
VGE(th)  
ICES  
IC = 250μA, VCE = VGE  
3.0  
5.5  
V
VCE = VCES, VGE = 0V  
300 μA  
mA  
TJ = 125°C  
5
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
VCE(sat)  
IC = 50A, VGE = 15V, Note 1  
TJ = 125°C  
2.10  
1.65  
2.70  
V
V
DS100010A(11/09)  
© 2009 IXYS CORPORATION, All Rights Reserved  

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