Datasheet > IXGR72N60C3D1

IXGR72N60C3D1

更新时间： 2024-03-12 21:01:41

品牌	Logo	应用领域
力特 - LITTELFUSE		开关双极性晶体管
页数	文件大小	规格书
8页	240K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能，电流范围在42A至120A之间。由于兼具

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

IXGR72N60C3D1 数据手册

V_CES

I_C110

V_CE(sat)

t_fi(typ)

= 600V

= 35A

≤£ 2.7V

= 55ns

GenX3 600V IGBT

IXGR72N60C3D1

with Diode

High-Speed Low-Vsat PT IGBT

40-100 kHz Switching

ISOPLUS 247^TM

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

600

V_CGR

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

±20

±30

Isolated Tab

I_C25

I_C110

I_F110

I_CM

T_C= 25°C (Limited by Leads)

T_C= 110°C

G = Gate

E = Emitter

C = Collector

T_C= 25°C, 1ms

400

I_A

T_C= 25°C

Features

E_AS

500

^zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

^zOptimized for Low Switching Losses

^zSquare RBSOA

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 2Ω

Clamped Inductive Load

I_CM= 150

(RBSOA)

V_CE≤ V_CES

P_C

T_C= 25°C

200

^zIsolated Mounting Surface

^zAnti-Parallel Ultra Fast Diode

^zAvalanche Rated

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

^z2500V Electrical Isolation

V_ISOL

50/60 Hz, RMS, t = 1Minute

2500

3000

I_ISOL< 1mA

t = 20 Seconds

Advantages

F_C

Mounting Force

20..120/4.5..27

N/lb

^zHigh Power Density

^zLow Gate Drive Requirement

T_L

Maximum Lead Temperature for Soldering

1.6mm (0.062 in.) from Case for 10s

300

260

°C

T_SOLD

Applications

Weight

^zHigh Frequency Power Inverters

^zUPS

^zMotor Drives

^zSMPS

^zPFC Circuits

Symbol

Test Conditions

Characteristic Values

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 250μA, V_CE= V_GE

3.0

5.5

V_CE= V_CES, V_GE= 0V

300 μA

T_J= 125°C

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 50A, V_GE= 15V, Note 1

T_J= 125°C

2.10

1.65

2.70

DS100010A(11/09)

12 3 4 5 6 7 8

中文翻译

下载PDF

与IXGR72N60C3D1相关器件

型号	品牌	获取价格	描述	数据表
IXGT10N170	IXYS	获取价格	High Voltage IGBT
IXGT10N170	LITTELFUSE	获取价格	功能与特色: 应用:?
IXGT10N170A	IXYS	获取价格	High Voltage IGBT
IXGT15N120B	IXYS	获取价格	HiPerFAST IGBT
IXGT15N120B2D1	IXYS	获取价格	HiPerFAST IGBT
IXGT15N120B2D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGT15N120BD1	IXYS	获取价格	Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGT15N120C	IXYS	获取价格	IGBT Lightspeed Series
IXGT15N120CD1	IXYS	获取价格	Low VCE(sat) IGBT with Diode High Speed IGBT with Diode
IXGT16N170	IXYS	获取价格	High Voltage IGBT