Datasheet > IXGR48N60B3D1

IXGR48N60B3D1

更新时间： 2024-11-05 12:02:23

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
4页	839K
描述
600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

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IXGR48N60B3D1 技术参数

是否无铅：	不含铅	生命周期：	Transferred
零件包装代码：	ISOPLUS	包装说明：	ISOPLUS247, 3 PIN
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.64	其他特性：	UL RECOGNIZED
外壳连接：	ISOLATED	最大集电极电流 (IC)：	60 A
集电极-发射极最大电压：	600 V	配置：	SINGLE WITH BUILT-IN DIODE
最大降落时间（tf）：	200 ns	门极发射器阈值电压最大值：	5.5 V
门极-发射极最大电压：	20 V	JESD-30 代码：	R-PSIP-T3
JESD-609代码：	e1	元件数量：	1
端子数量：	3	最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	IN-LINE	峰值回流温度（摄氏度）：	NOT SPECIFIED
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	150 W
认证状态：	Not Qualified	子类别：	Insulated Gate BIP Transistors
表面贴装：	NO	端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
处于峰值回流温度下的最长时间：	NOT SPECIFIED	晶体管应用：	POWER CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	347 ns
标称接通时间 (ton)：	44 ns	Base Number Matches：	1

IXGR48N60B3D1 数据手册

IXYS

POWER

ꢀ ꢁ w p r o D u c T B r I ꢁ f

Efficiency through T e chnology

600V GenX3™ IGBTs

ꢀꢁXT GꢁꢀꢁraTIoꢀ 600V IGBTꢂ for powꢁr coꢀVꢁrꢂIoꢀ applIcaTIoꢀꢂ

jaꢀuary 2009

oVꢁrVIꢁw

IXYS extends its GenX3^TMinsulated gate bipolar transistor (IGBT) product line to

600 volts. These new IGBTs are manufactured using IXYS’ state-of-the-art GenX3^TM

IGBT process and uꢀlize IXYS’ advanced Punch-Though (PT) technology, tailored

to provide higher surge current capabiliꢀes, lower saturaꢀon voltages, and lower

switching losses.

To accommodate opꢀmum part selecꢀon, designers have a choice in selecꢀng

between three sub-classes denoted A3, B3, and C3. These classiﬁcaꢀons allow

designers to “dial in” the best compromise between staꢀc (conducꢀon) and

dynamic (switching) losses, improving over-all system eﬃciency in a variety of

power conversion applicaꢀons by balancing criꢀcal requirements such as switching

frequency, eﬃciency, and cost structure. The A3-Class are opꢀmized for low

saturaꢀon voltage V(sat) and are well suited for applicaꢀons requiring switching

frequencies up to 5kHz. Similarly, the B3-Class oﬀers low saturaꢀon voltages, but

is opꢀmized to accommodate applicaꢀons that require “medium speed” switching

operaꢀon from 5kHz to 40kHz. The C3-Class is opꢀmized for “high speed” switching

operaꢀon from 40kHz to 100kHz and resonant switching operaꢀon of up to

400kHz.

IXYS 600V GenX3^TMIGBTs are oﬀered in various standard packages, including the

full gamut of surface mount and discrete packages with current raꢀngs from 36

amperes to 210 amperes. Furthermore, some devices will be oﬀered in PLUS and

ISOPLUS isolated packages, featuring UL recognized 2500V isolaꢀon and superior

thermal performance. Co-Packed variants of these new devices are available with

IXYS’ HiPerFRED^TMultra-fast recovery diodes providing excepꢀonal fast recovery

and soꢁ switching characterisꢀcs.

These IGBTs are designed to achieve the opꢀmal soluꢀon in applicaꢀons such as

power inverters, UPS, motor drives, SMPS, PFC, baꢂery chargers, welding machines,

lamp ballasts, inrush current protecꢀon circuits and DC choppers.

ꢃꢃꢃ.ixꢄs.ꢅꢆm

12 3 4

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IXGR48N60B3D1 替代型号

型号	品牌	替代类型	描述	数据表
IXGR24N60CD1	IXYS	类似代替	Insulated Gate Bipolar Transistor, 42A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN
IXGR48N60C3D1	IXYS	类似代替	600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
IXGR48N60B3	IXYS	功能相似	600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications

与IXGR48N60B3D1相关器件

型号	品牌	获取价格	描述	数据表
IXGR48N60C3D1	IXYS	获取价格	600V GenX3 IGBTs next generation 600V IGBTs for power conversion applications
IXGR48N60C3D1	LITTELFUSE	获取价格	GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT（打穿）生产。? 30
IXGR50N160H1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 1600V V(BR)CES, N-Channel, PLASTIC, ISOPLUS24
IXGR50N60A2U1	IXYS	获取价格	Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN
IXGR50N60B	IXYS	获取价格	HiPerFAST IGBT ISOPLUS247
IXGR50N60B2	IXYS	获取价格	B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
IXGR50N60B2D1	IXYS	获取价格	B2-Class High Speed IGBTs (Electrically Isolated Back Surface)
IXGR50N60BD1	IXYS	获取价格	HiPerFAST IGBT ISOPLUS247
IXGR50N60C2	IXYS	获取价格	HiPerFAST IGBT with Diode C2-Class High Speed IGBTs
IXGR50N60C2D1	IXYS	获取价格	HiPerFAST IGBT with Diode C2-Class High Speed IGBTs

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