Datasheet > IXGR55N120A3H1

IXGR55N120A3H1

更新时间： 2024-09-28 20:08:39

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
3页	100K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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IXGR55N120A3H1 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.26
Base Number Matches：	1

IXGR55N120A3H1 数据手册

Advance Technical Information

GenX3^TM1200V

IGBT w/ Diode

V_CES= 1200V

I_C110= 30A

V_CE(sat)≤ 2.35V

IXGR55N120A3H1

(Electrically Isolated Tab)

Ultra-Low-Vsat PT IGBTs for

up to 3kHz Switching

ISOPLUS 247^TM

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

1200

±20

V_CGR

Isolated Tab

V_GES

V_GEM

Transient

±30

G = Gate

C = Collector

E = Emitter

I_C25

I_C110

I_F110

I_CM

T_C= 25°C ( Chip Capability )

T_C= 110°C

T_C= 25°C, 1ms

330

Features

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 3Ω

I_CM= 110

(RBSOA)

Clamped Inductive Load

@ 0.8 • V_CES

^zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

P_C

T_C= 25°C

200

^zIsolated Mounting Surface

^z2500V~ Electrical Isolation

^zAnti-Parallel Ultra Fast Diode

^zOptimized for Low Conduction Losses

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

Advantages

V_ISOL

50/60 Hz, 1 minute

Mounting Force

2500

^zHigh Power Density

^zLow Gate Drive Requirement

F_C

20..120/4.5..27

N/lb.

Weight

Applications

Symbol

Test Conditions

Characteristic Values

^zPower Inverters

^zUPS

(T_J= 25°C, Unless Otherwise Specified)

Min.

Typ.

Max.

V_GE(th)

I_CES

I_C= 1mA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

3.0

5.0

^zMotor Drives

25 μA

^zSMPS

^zPFC Circuits

Note 1, T_J= 125°C

1.5 mA

^zBattery Chargers

^zWelding Machines

^zLamp Ballasts

^zInrush Current Protection Circuits

I_GES

V_CE= 0V, V_GE= ±20V

±100 nA

V_CE(sat)

I_C= 55A, V_GE= 15V, Note 2

T_J= 125°C

2.35

2.20

DS100219(12/09)

12 3

中文翻译

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