Datasheet > IXGR6N170A

IXGR6N170A

更新时间： 2024-03-04 09:49:39

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	197K
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中文翻译

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数据手册

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IXGR6N170A 数据手册

Advance Technical Information

High Voltage IGBT

V_CES

I_C25

= 1700V

= 5.5A

IXGR6N170A

V_CE(sat)≤ 7.0V

t_fi(typ)= 32ns

(Electrically Isolated Tab)

Symbol

V_CES

Test Conditions

Maximum Ratings

ISOPLUS247^TM

T_C= 25°C to 150°C

1700

V_CGR

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C25

I_C110

I_CM

T_C= 25°C

5.5

2.5

Isolated Tab

= Collector

T_C= 110°C

T_C= 25°C, 1ms

G = Gate

E = Emitter

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 33Ω

I_CM= 12

(RBSOA)

Clamped Inductive Load

@ 0.8 • V_CES

t_SC

P_C

T_J= 125°C, V_CE= 1200 V, V_GE= 15 V, R_G= 33Ω

μs

T_C= 25°C

Features

T_J

- 55 ... +150

150

°C

^zSilicon Chip on Direct-Copper Bond

(DCB) Substrate

^zIsolated Mounting Surface

^z2500V~ Electrical Isolation

T_JM

T_stg

- 55 ... +150

V_ISOL

50/60 Hz, RMS, t = 1minute

2500

3000

I_ISOL< 1mA

t = 20 seconds

Advantages

F_C

Mounting Force

20..120/4.5..27

N/lb

^zHigh Power Density

^zLow Gate Drive Requirement

T_L

Maximum Lead Temperature for Soldering

1.6mm (0.062 in.) from Case for 10s

300

260

°C

T_SOLD

Weight

Applications

^zPower Inverters

^zUPS

Symbol Test Conditions

(T_J= 25°C Unless Otherwise Specified)

Characteristic Values

^zMotor Drives

^zSMPS

Min.

1700

3.0

Typ.

Max.

^zPFC Circuits

^zWelding Machines

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= 0.8 • V_CES, V_GE= 0V

5.0

10 μA

Note 2, T_J= 125°C

500 μA

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= 3A, V_GE= 15V, Note 1

7.0

T_J= 125°C

5.4

DS100279(08/09)

12 3 4 5 6

中文翻译

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