Datasheet > IXGR50N60C2

IXGR50N60C2

更新时间： 2024-02-18 02:39:01

品牌	Logo	应用领域
IXYS		二极管双极性晶体管
页数	文件大小	规格书
6页	511K
描述
HiPerFAST IGBT with Diode C2-Class High Speed IGBTs

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中文翻译

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数据手册

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IXGR50N60C2 数据手册

HiPerFAST^TM

IGBT with Diode

IXGR 50N60C2

IXGR 50N60C2D1

V_CES

I_C25

V_CE(sat)

t_fi(typ)

= 600 V

= 75 A

= 2.7 V

= 48 ns

C2-Class High Speed IGBTs

Preliminary Data Sheet

Symbol

TestConditions

Maximum Ratings

ISOPLUS247

(IXGR)

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

(ISOLATED TAB)

G = Gate

E = Emitter

C = Collector

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1 ms

300

Features

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

I_CM= 100

• Very high frequency IGBT and

anti-parallel FRED in one package

• Square RBSOA

(RBSOA)

Clamped inductive load @ V_CE≤ 600 V

P_C

T_C= 25°C

200

• High current handling capability

V_ISOL

T_J

50/60 Hz RMS, t = 1m

2500

-55 ... +150

150

°C

• MOS Gate turn-on for drive simplicity

• Fast Recovery Epitaxial Diode (FRED)

T_JM

T_stg

with soft recovery and low I_RM

-55 ... +150

Applications

Weight

• Switch-mode and resonant-mode

power supplies

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

• Uninterruptible power supplies (UPS)

• DC choppers

• AC motor speed control

• DC servo and robot drives

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Min. Typ. Max.

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

3.0

5.0

Advantages

V_CE= V_CES

V_GE= 0 V

T_J= 25°C

T_J= 125°C

650

µA

• Space savings (two devices in one

package)

• Easy to mount with 1 screw

I_GES

V_CE= 0 V, V_GE= 20 V

100

2.7

V_CE(sat)

I_C= 40 A, V_GE= 15 V

Note 1

T_J= 25°C

T_J= 125°C

1.8

DS99163(04/04)

12 3 4 5 6

中文翻译

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