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IXGR48N60C3D1 PDF预览

IXGR48N60C3D1

更新时间: 2024-11-06 14:56:15
品牌 Logo 应用领域
力特 - LITTELFUSE 开关双极性晶体管
页数 文件大小 规格书
8页 234K
描述
GenX3? IGBT采用我们完善的HDMOS IGBT工艺进行PT(打穿)生产。? 300V? GenX3? IGBT提供高达150 kHz的开关性能,电流范围在42A至120A之间。 由于兼具

IXGR48N60C3D1 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.17
Base Number Matches:1

IXGR48N60C3D1 数据手册

 浏览型号IXGR48N60C3D1的Datasheet PDF文件第2页浏览型号IXGR48N60C3D1的Datasheet PDF文件第3页浏览型号IXGR48N60C3D1的Datasheet PDF文件第4页浏览型号IXGR48N60C3D1的Datasheet PDF文件第5页浏览型号IXGR48N60C3D1的Datasheet PDF文件第6页浏览型号IXGR48N60C3D1的Datasheet PDF文件第7页 
GenX3TM 600V IGBT  
with Diode  
VCES  
IC25  
VCE(sat)  
tfi(typ)  
= 600V  
= 56A  
2.7V  
= 38ns  
IXGR48N60C3D1  
(Electrically Isolated Back Surface)  
High Speed PT IGBTs for  
40-100kHz Switching  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
ISOPLUS 247TM  
TJ = 25°C to 150°C  
600  
600  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
G
C
E
TAB  
IC25  
IC110  
ID110  
ICM  
TC = 25°C  
56  
26  
A
A
A
A
TC = 110°C  
TC = 110°C  
TC = 25°C, 1ms  
27  
G = Gate  
E = Emitter  
C = Collector  
230  
IA  
TC = 25°C  
TC = 25°C  
30  
A
EAS  
300  
mJ  
Features  
SSOA  
VGE = 15V, TVJ = 125°C, RG = 3Ω  
Clamped Inductive Load  
ICM = 100  
A
V
z Silicon Chip on Direct-Copper Bond  
(DCB) Substrate  
(RBSOA)  
@ VCE 600  
- UL Recognized Package  
- Isolated Mounting Surface  
- 2500V Electrical Isolation  
z Avalanche Rated  
PC  
TC = 25°C  
125  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
z Square RBSOA  
-55 ... +150  
z Anti-Parallel Ultra Fast Diode  
z Fast Switching  
z International Standard Package  
TL  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 Seconds  
300  
260  
°C  
°C  
TSOLD  
VISOL  
FC  
50/60 Hz RMS, t = 1min  
2500  
20..120 / 4.5..27  
5
V~  
N/lb.  
g
Mounting Force  
Advantages  
Weight  
z High Power Density  
z Low Gate Drive Requirement  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C, Unless Otherwise Specified)  
Applications  
Min.  
Typ. Max.  
z High Frequency Power Inverters  
z UPS  
VGE(th)  
ICES  
IC  
= 250μA, VCE = VGE  
3.0  
5.5  
V
z Motor Drives  
VCE = VCES  
VGE = 0V  
300 μA  
1.75 mA  
TJ = 125°C  
z SMPS  
z PFC Circuits  
IGES  
VCE = 0V, VGE = ±20V  
±100 nA  
z Battery Chargers  
z Welding Machines  
z Lamp Ballasts  
VCE(sat)  
IC  
= 30A, VGE = 15V, Note 1  
TJ = 125°C  
2.3  
1.8  
2.7  
V
V
DS99810B(01/09)  
© 2009 IXYS CORPORATION, All rights reserved  

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