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IXGR50N60A2U1 PDF预览

IXGR50N60A2U1

更新时间: 2024-11-21 20:10:11
品牌 Logo 应用领域
IXYS 功率控制晶体管
页数 文件大小 规格书
6页 143K
描述
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

IXGR50N60A2U1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:ISOPLUS
包装说明:ISOPLUS247, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:5.83
其他特性:UL RECOGNIZED外壳连接:ISOLATED
最大集电极电流 (IC):75 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-PSIP-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):1230 ns
标称接通时间 (ton):45 nsBase Number Matches:1

IXGR50N60A2U1 数据手册

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Advance Technical Information  
VCES  
IC25  
VCE(sat)  
= 600 V  
= 75 A  
= 1.7 V  
IXGR 50N60A2U1  
IGBT with Diode  
Low Saturation Voltage IGBT with  
Low Forward Drop Diode  
Electrically Isolated Mounting Tab  
PreliminaryDataSheet  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS247(IXGR)  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
C
E
ISOLATEDTAB  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
75  
50  
A
A
A
A
G = Gate  
E = Emitter  
C = Collector  
TC = 110°C (50N60A2U1 Diode)  
TC = 25°C, 1 ms  
25  
200  
Features  
Low on-state voltage IGBT and  
anti-parallel diode in one package  
High current handling capability  
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ VCE 600 V  
ICM = 80  
A
(RBSOA)  
MOS Gate turn-on for drive simplicity  
PC  
TC = 25°C  
200  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Applications  
TJM  
Tstg  
Lighting controls  
Heating controls  
AC/DC relays  
-55 ... +150  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
FC  
Mounting Force  
22..130/5..29  
N/lb  
Advantages  
VISOL  
50/60 Hz, RMS, t = 1 minute  
ISOL = 1mA, t = 1 s  
2500  
3000  
V~  
V~  
Space savings (two devices in one  
package)  
Easy to mount with 1 screw or spring  
Weight  
4
g
clip  
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES  
VGE = 0 V  
TJ = 25°C  
TJ = 125°C  
650  
5
µA  
mA  
IGES  
VCE = 0 V, VGE = 20 V  
100  
1.7  
nA  
VCE(sat)  
IC = 50 A, VGE = 15 V  
Note 1  
V
V
TJ = 125°C  
1.3  
© 2005 IXYS All rights reserved  
DS99343(03/05)  

IXGR50N60A2U1 替代型号

型号 品牌 替代类型 描述 数据表
IXGR72N60A3H1 IXYS

完全替代

Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, ISOPLUS247, 3 PIN

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