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IXGR50N60B PDF预览

IXGR50N60B

更新时间: 2024-11-05 03:14:35
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
5页 566K
描述
HiPerFAST IGBT ISOPLUS247

IXGR50N60B 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:ISOPLUS
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:compliant风险等级:5.81
外壳连接:ISOLATED最大集电极电流 (IC):75 A
集电极-发射极最大电压:600 V配置:SINGLE
门极发射器阈值电压最大值:5 V门极-发射极最大电压:20 V
JESD-30 代码:R-PSIP-T3JESD-609代码:e1
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):250 W认证状态:Not Qualified
子类别:Insulated Gate BIP Transistors表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):375 ns标称接通时间 (ton):110 ns
Base Number Matches:1

IXGR50N60B 数据手册

 浏览型号IXGR50N60B的Datasheet PDF文件第2页浏览型号IXGR50N60B的Datasheet PDF文件第3页浏览型号IXGR50N60B的Datasheet PDF文件第4页浏览型号IXGR50N60B的Datasheet PDF文件第5页 
HiPerFASTTM IGBT  
ISOPLUS247TM  
VCES = 600 V  
IC25 = 75 A  
VCE(sat) = 2.5 V  
tfi(typ) = 85 ns  
IXGR 50N60B  
IXGR 50N60BD1  
(Electrically Isolated Back Surface)  
(D1)  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS 247  
E153432  
VCES  
VCGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGE = 1 MΩ  
600  
600  
V
V
VGES  
VGEM  
Continuous  
Transient  
20  
30  
V
V
G
C
E
Isolated Backside*  
IC25  
IC110  
ICM  
TC = 25°C  
TC = 110°C  
TC = 25°C, 1 ms  
75  
45  
200  
A
A
A
G = Gate,  
E=Emitter  
C = Collector  
SSOA  
V
= 15 V, T = 125°C, RG = 10 Ω  
I
= 100  
A
(RBSOA)  
CGlaE mped indVuJctive load, L = 100 µH  
TC = 25°C  
@C0M.8 VCES  
250  
* Patent pending  
PC  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
Features  
z
DCB Isolated mounting tab  
Meets TO-247AD package Outline  
High current handling capability  
Latest generation HDMOSTM process  
MOS Gate turn-on  
z
z
z
z
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
VISOL  
50/60 Hz, RMS, t = 1minute leads-to-tab  
2500  
5
V
g
- drive simplicity  
Weight  
Applications  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
z
Uninterruptible power supplies (UPS)  
z
Switched-mode and resonant-mode  
power supplies  
VGE(th)  
ICES  
I
= 250 µA, VCE = VGE  
50N60B  
2.5  
5.0  
5.0  
V
V
ICC = 500 µA  
50N60BD1 2.5  
z
AC motor speed control  
z
DC servo and robot drives  
VCE = 600V  
VGE = 0 V  
50N60B  
200 µA  
650 µA  
z
DC choppers  
50N60BD1  
50N60B  
TJ = 125°C  
1
5
mA  
mA  
50N60BD1  
Advantages  
z
IGES  
VCE = 0 V, VGE = 20 V  
100 nA  
2.5  
Easy assembly  
High power density  
Very fast switching speeds for high  
frequency applications  
z
VCE(sat)  
IC = IT, VGE = 15 V  
V
z
© 2004 IXYS All rights reserved  
DS98730C(06/04)  

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