是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | ISOPLUS |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.81 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 75 A |
集电极-发射极最大电压: | 600 V | 配置: | SINGLE |
门极发射器阈值电压最大值: | 5 V | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 250 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | POWER CONTROL | 晶体管元件材料: | SILICON |
标称断开时间 (toff): | 375 ns | 标称接通时间 (ton): | 110 ns |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
IXSN62N60U1 | IXYS |
类似代替 |
IGBT with Diode - Short Circuit SOA Capability | |
IXER60N120 | IXYS |
类似代替 |
NPT3 IGBT | |
IXDN75N120 | IXYS |
功能相似 |
High Voltage IGBT |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
IXGR50N60B2 | IXYS |
获取价格 |
B2-Class High Speed IGBTs (Electrically Isolated Back Surface) | |
IXGR50N60B2D1 | IXYS |
获取价格 |
B2-Class High Speed IGBTs (Electrically Isolated Back Surface) | |
IXGR50N60BD1 | IXYS |
获取价格 |
HiPerFAST IGBT ISOPLUS247 | |
IXGR50N60C2 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode C2-Class High Speed IGBTs | |
IXGR50N60C2D1 | IXYS |
获取价格 |
HiPerFAST IGBT with Diode C2-Class High Speed IGBTs | |
IXGR50N90B2D1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 200A I(C), 900V V(BR)CES, N-Channel, TO-247AD, ISOPLUS2 | |
IXGR50N90B2D1 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXGR55N120A3H1 | IXYS |
获取价格 |
Insulated Gate Bipolar Transistor, 70A I(C), 1200V V(BR)CES, N-Channel, TO-247AD, ISOPLUS2 | |
IXGR55N120A3H1 | LITTELFUSE |
获取价格 |
Insulated Gate Bipolar Transistor, | |
IXGR60N60B2 | IXYS |
获取价格 |
IGBT 600V 75A 250W ISOPLUS247 |