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IXGR50N60B2 PDF预览

IXGR50N60B2

更新时间: 2024-02-02 07:13:32
品牌 Logo 应用领域
IXYS 双极性晶体管
页数 文件大小 规格书
6页 518K
描述
B2-Class High Speed IGBTs (Electrically Isolated Back Surface)

IXGR50N60B2 数据手册

 浏览型号IXGR50N60B2的Datasheet PDF文件第2页浏览型号IXGR50N60B2的Datasheet PDF文件第3页浏览型号IXGR50N60B2的Datasheet PDF文件第4页浏览型号IXGR50N60B2的Datasheet PDF文件第5页浏览型号IXGR50N60B2的Datasheet PDF文件第6页 
HiPerFASTTM IGBT  
ISOPLUS247TM  
IXGR 50N60B2  
IXGR 50N60B2D1  
VCES  
IC25  
VCE(sat)  
tfi(typ)  
= 600 V  
= 68 A  
= 2.2 V  
= 65 ns  
B2-Class High Speed IGBTs  
(Electrically Isolated Back Surface)  
Preliminary Data Sheet  
IXGR_B2  
IXGR_B2D1  
Symbol  
TestConditions  
Maximum Ratings  
ISOPLUS247  
(IXGR)  
VCES  
VCGR  
TJ = 25°C to 150°C  
600  
600  
V
V
TJ = 25°C to 150°C; RGE = 1 MΩ  
G
AB)  
VGES  
VGEM  
Continuous  
Transient  
±20  
±30  
V
V
C
E
G = Gate  
C = Collector  
E = Emitter  
IC25  
IC110  
IF110  
ICM  
TC = 25°C (limited by leads)  
TC = 110°C  
68  
36  
A
A
A
A
Features  
TC = 110°C (50N60B2D1 Diode)  
TC = 25°C, 1 ms  
39  
z
300  
DCB Isolated mounting tab  
Meets TO-247AD package Outline  
High current handling capability  
Latest generation HDMOSTM process  
MOS Gate turn-on  
z
z
z
z
SSOA  
VGE = 15 V, TVJ = 125°C, RG = 10 Ω  
Clamped inductive load @ VCE 600 V  
ICM = 100  
A
(RBSOA)  
PC  
TC = 25°C  
200  
W
- drive simplicity  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
Applications  
TJM  
Tstg  
-55 ... +150  
z
Uninterruptible power supplies (UPS)  
Switched-mode and resonant-mode  
z
VISOL  
50/60 Hz RMS, t = 1m  
5
2500  
V
power supplies  
AC motor speed control  
DC servo and robot drives  
DC choppers  
z
Weight  
g
z
z
Maximum lead temperature for soldering  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
Advantages  
z
Easy assembly  
High power density  
Very fast switching speeds for high  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
Min. Typ. Max.  
z
z
frequency applications  
VGE(th)  
ICES  
IC = 250 µA, VCE = VGE  
3.0  
5.0  
V
VCE = VCES  
VGE = 0 V  
50N60B2  
50N60B2D1  
50  
650  
µA  
µA  
IGES  
VCE = 0 V, VGE = ±20 V  
±100  
2.2  
nA  
VCE(sat)  
IC = 40 A, VGE = 15 V  
Note 1  
1.8  
1.7  
V
V
TJ = 125°C  
© 2004 IXYS All rights reserved  
DS99144A(05/04)  

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