Datasheet > IXFT30N85XHV

IXFT30N85XHV

更新时间： 2024-11-18 22:59:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
7页	265K
描述
MOSFET N-CH 850V 30A TO268

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中文翻译

获取价格

数据手册

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IXFT30N85XHV 数据手册

Advance Technical Information

X-Class HiPerFET^TM

Power MOSFET

V_DSS= 850V

I_D25= 30A

R_DS(on) 220m

IXFT30N85XHV

IXFH30N85X

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-268HV (IXFT)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25C to 150C

850

D (Tab)

V_DGR

T_J= 25C to 150C, R_GS= 1M

TO-247 (IXFH)

V_GSS

V_GSM

Continuous

Transient

30

40

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

I_A

T_C= 25C

D (Tab)

= Drain

E_AS

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

G = Gate

S = Source

Tab = Drain

695

T_J

-55 ... +150

150

C

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



International Standard Packages

High Voltage Package

Low R_DS(ON)and Q_G

Avalanche Rated

Low Package Inductance

M_d

Mounting Torque (TO-247)

1.13 / 10

Nm/lb.in



Weight

TO-268HV

TO-247

Advantages



High Power Density

Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

(T_J= 25C, Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 2.5mA

V_GS= 30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

850

Applications

3.5

5.5



Switch-Mode and Resonant-Mode

100 nA

Power Supplies

DC-DC Converters

PFC Circuits

AC and DC Motor Drives



I_DSS

25 A

3 mA



T_J= 125C



Robotics and Servo Controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

220 m

DS100760(11/16)

12 3 4 5 6 7

中文翻译

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