Datasheet > IXFT36N50P

IXFT36N50P

更新时间： 2024-11-06 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
7页	238K
描述
功能与特色: 优点: 应用:

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中文翻译

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数据手册

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IXFT36N50P 数据手册

Polar^TMHiPerFET^TM

Power MOSFETs

V_DSS= 500V

I_D25= 36A

IXFV36N50PS

IXFV36N50P

IXFH36N50P

IXFT36N50P

R_DS(on)≤ 170mΩ

t_rr

≤ 200ns

N-Channel Enhancement Mode

Avalanche Rated

PLUS220SMD (IXFV...S)

Fast Intrinsic Diode

D (Tab)

PLUS220 (IXFV)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

500

V_DGR

V_GSS

V_GSM

Continuous

Transient

±30

±40

D (Tab)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

TO-268 (IXFT)

I_A

E_AS

T_C= 25°C

1.5

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

D (Tab)

540

TO-247 (IXFH)

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

D (Tab)

M_d

F_C

Mounting Torque (TO-247)

Mounting Force (PLUS220)

1.13/10

Nm/lb.in.

N/lb.

20..120 /4.5..27

G = Gate

= Drain

S = Source

Tab = Drain

Weight

PLUS220

TO-268

TO-247

4.0

6.0

Features

Low Package Inductance

Fast Intrinsic Rectifier

Low R_DS(on)and Q_G

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

500

3.0

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 250μA

V_DS= V_GS, I_D= 4mA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

5.0

Advantages

High Power Density

Easy to Mount

Space Savings

±100 nA

I_DSS

25 μA

T_J= 125°C

500 μA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

170 mΩ

DS99364F(07/11)

12 3 4 5 6 7

中文翻译

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