Datasheet > IXFT32N50Q

IXFT32N50Q

更新时间： 2024-11-19 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
5页	644K
描述
功能与特色: 应用: 优点:

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中文翻译

获取价格

数据手册

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IXFT32N50Q 数据手册

HiPerFET^TM

Power MOSFETs

Q-Class

IXFH 32N50Q

IXFT 32N50Q

V_DSSI_D25

R_DS(on)

500 V 32 A 0.16 Ω

t_rr≤ 250 ns

N-ChannelEnhancementMode

AvalancheRated, LowQ_g,Highdv/dt

Symbol

TestConditions

Maximum Ratings

TO-247AD(IXFH)

V_DSS

V_DGR

= 25°C to 150°C

500

T^J_J= 25°C to 150°C; R_GS= 1 MΩ

V_GS

Continuous

Transient

V_GSM

(TAB)

I_D25

I_DM

I_AR

= 25°C

128

T^C= 25°C; pulse width limited by T_JM

T^C_C= 25°C

TO-268 (D3) ( IXFT)

E_AR

E_AS

T_C= 25°C

1500

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

(TAB)

P_D

T_C= 25°C

416

T_J

-55 ... + 150

150

°C

G = Gate

= Drain

T_JM

T_stg

S = Source

TAB = Drain

-55 ... + 150

T_L

1.6 mm (0.063 in) from case for 10 s

Mounting torque

300

°C

M_d

1.13/10

Nm/lb.in.

Weight

TO-247

TO-268

Features

IXYS advanced low Q_gprocess

Low gate charge and capacitances

- easier to drive

- faster switching

Symbol

V_DSS

TestConditions

Characteristic Values

International standard packages

Low R_{DS (on)}

(T_J= 25°C, unless otherwise specified)

min.

typ.

max.

Unclamped Inductive Switching (UIS)

rated

Molding epoxies meet UL 94 V-0

flammability classification

V_GS= 0 V, I_D= 250 uA

500

V_GS(th)

I_GSS

V_DS= V_GS, I_D= 4 mA

2.5

4.5

V_GS= 20 V_DC, V_DS= 0

100

Advantages

I_DSS

V_DS= V

T = 25°C

100

µA

V_GS= 0^DV^SS

T_J^J= 125°C

Easy to mount

Space savings

R_DS(on)

= 10 V, I_D= 0.5 I_D25

0.16

Ω

N^Go^Ste 1

High power density

DS98596E(02/04)

12 3 4 5

中文翻译

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