IXFT4N100

更新时间： 2024-11-18 03:02:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	91K
描述
HiPerFET Power MOSFETs Q-Class

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中文翻译

获取价格

数据手册

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IXFT4N100 数据手册

HiPerFET^TM

Power MOSFETs

Q-Class

IXFH 4N100Q V_DSS

IXFT 4N100Q I_D25

= 1000 V

4 A

R_DS(on)= 3.0 W

t_rr£ 250 ns

N-Channel Enhancement Mode

Avalanche Rated, Low Q_g, High dv/dt

Preliminary Data Sheet

Symbol

TestConditions

MaximumRatings

TO-247 AD (IXFH)

V_DSS

V_DGR

T_J= 25°C to 150°C

1000

T_J= 25°C to 150°C; R_GS= 1 MW

V_GS

Continuous

Transient

±20

±30

(TAB)

V_GSM

I_D25

I_DM

I_AR

T_C= 25°C

TO-268 (D3) ( IXFT)

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

E_AR

T_C= 25°C

700

E_AS

(TAB)

dv/dt

I_S£ I_DM, di/dt £ 100 A/ms, V_DD£ V_DSS

T_J£ 150°C, R_G= 2 W

V/ns

G = Gate

S = Source

= Drain

P_D

T_C= 25°C

150

TAB = Drain

T_J

-55 to +150

°C

T_JM

T_stg

150

-55 to +150

T_L

1.6 mm (0.063 in) from case for 10 s

Mountingtorque

300

°C

M_d

1.13/10

Nm/lb.in.

Features

Weight

TO-247

TO-268

• IXYS advanced low Q_gprocess

• Low gate charge and capacitances

- easier to drive

- faster switching

• Internationalstandardpackages

• Low R_{DS (on)}

• UnclampedInductiveSwitching(UIS)

rated

Symbol

TestConditions

CharacteristicValues

(T_J= 25°C, unless otherwise specified)

min.

typ.

max.

• MoldingepoxiesmeetUL94V-0

flammabilityclassification

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 1 mA

V_DS= V_GS, I_D= 1.5 mA

V_GS= ±20 V_DC, V_DS= 0

1000

3.0

5.0

±100

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

• Easy to mount

• Space savings

• Highpowerdensity

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t £ 300 ms, duty cycle d £ 2 %

3.0

IXYS reserves the right to change limits, test conditions, and dimensions.

98648A(03/24/00)

1 - 4

12 3 4

中文翻译

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