Datasheet > IXFT58N20Q

IXFT58N20Q

更新时间： 2024-11-06 14:56:11

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
3页	438K
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中文翻译

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数据手册

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IXFT58N20Q 数据手册

HiPerFET^TM

Power MOSFETs

Q-Class

IXFH 58N20Q

IXFT 58N20Q

V_DSS= 200 V

I_D25= 58 A

R_DS(on)= 40 mW

t_rr£ 200 ns

N-ChannelEnhancementMode

AvalancheRatedHighdv/dt, LowQ_g

Preliminary data sheet

TO-268 (D3) (IXFT) Case Style

Symbol

TestConditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

200

V_GS

V_GSM

Continuous

Transient

±20

±30

(TAB)

I_D25

I_DM

I_AR

T_C= 25°C

232

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

TO-247 AD

E_AR

E_AS

T_C= 25°C

1.0

(TAB)

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

P_D

T_C= 25°C

300

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

S = Source

D = Drain

TAB = Drain

T_L

1.6 mm (0.062 in.) from case for 10 s

Mounting torque

300

°C

Features

M_d

1.13/10 Nm/lb.in.

^lIXYS advanced low Q_gprocess

Weight

TO-247

TO-268

^lInternational standard packages

^lLow gate charge and capacitance

- easier to drive

- faster switching

^lLow R_{DS (on)}

Symbol

TestConditions

Characteristic Values

^lUnclamped Inductive Switching (UIS)

rated

(T_J= 25°C, unless otherwise specified)

Min. Typ.

Max.

V_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

V_GS= ±20 V_DC, V_DS= 0

200

^lMolding epoxies meet UL 94 V-0

flammability classification

2.0

4.0

±100

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

µA

Easy to mount

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

40 mΩ

High power density

98523A (5/99)

12 3

中文翻译

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