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IXFT58N20Q PDF预览

IXFT58N20Q

更新时间: 2024-11-19 14:56:11
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力特 - LITTELFUSE /
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3页 438K
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IXFT58N20Q 数据手册

 浏览型号IXFT58N20Q的Datasheet PDF文件第2页浏览型号IXFT58N20Q的Datasheet PDF文件第3页 
HiPerFETTM  
Power MOSFETs  
Q-Class  
IXFH 58N20Q  
IXFT 58N20Q  
VDSS = 200 V  
ID25 = 58 A  
RDS(on) = 40 mW  
trr £ 200 ns  
N-ChannelEnhancementMode  
AvalancheRatedHighdv/dt, LowQg  
Preliminary data sheet  
TO-268 (D3) (IXFT) Case Style  
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
200  
200  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
(TAB)  
S
ID25  
IDM  
IAR  
TC = 25°C  
58  
232  
58  
A
A
A
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
TO-247 AD  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
30  
mJ  
J
1.0  
(TAB)  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
,
5
V/ns  
PD  
TC = 25°C  
300  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TL  
1.6 mm (0.062 in.) from case for 10 s  
Mounting torque  
300  
°C  
Features  
Md  
1.13/10 Nm/lb.in.  
l IXYS advanced low Qg process  
Weight  
TO-247  
TO-268  
6
4
g
g
l International standard packages  
l Low gate charge and capacitance  
- easier to drive  
- faster switching  
l Low RDS (on)  
Symbol  
TestConditions  
Characteristic Values  
l Unclamped Inductive Switching (UIS)  
rated  
(TJ = 25°C, unless otherwise specified)  
Min. Typ.  
Max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 250 µA  
VDS = VGS, ID = 4 mA  
VGS = ±20 VDC, VDS = 0  
200  
V
V
l Molding epoxies meet UL 94 V-0  
flammability classification  
2.0  
4.0  
±100  
nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
25  
1
µA  
mA  
l
Easy to mount  
Space savings  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Pulse test, t 300 µs, duty cycle d 2 %  
40 mΩ  
l
High power density  
© 1999 IXYS All rights reserved  
98523A (5/99)  

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