5秒后页面跳转
IXFT320N10T2 PDF预览

IXFT320N10T2

更新时间: 2024-11-06 14:56:51
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
7页 212K
描述
这些器件具有40V至170V的漏极 - 源极电压额定值,并可提供高达600安培的高电流性能(Tc=@25oC)。 通过结合高电流额定值与紧凑的封装选择,这些尺寸更加小巧的器件能够控制更高的功率。

IXFT320N10T2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Base Number Matches:1

IXFT320N10T2 数据手册

 浏览型号IXFT320N10T2的Datasheet PDF文件第2页浏览型号IXFT320N10T2的Datasheet PDF文件第3页浏览型号IXFT320N10T2的Datasheet PDF文件第4页浏览型号IXFT320N10T2的Datasheet PDF文件第5页浏览型号IXFT320N10T2的Datasheet PDF文件第6页浏览型号IXFT320N10T2的Datasheet PDF文件第7页 
TrenchT2TM HiperFETTM  
Power MOSFET  
VDSS = 100V  
ID25 = 320A  
RDS(on) 3.5mΩ  
IXFH320N10T2  
IXFT320N10T2  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-247 (IXFH)  
Fast Intrinsic Diode  
G
D
D (Tab)  
S
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
100  
100  
V
V
VDGR  
TO-268 (IXFT)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
G
ID25  
ILRMS  
IDM  
TC = 25°C (Chip Capability)  
320  
160  
A
A
A
S
Lead Current Limit, RMS  
D (Tab)  
TC = 25°C, Pulse Width Limited by TJM  
800  
IA  
TC = 25°C  
TC = 25°C  
160  
1.5  
A
J
G = Gate  
S = Source  
D
= Drain  
EAS  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 175°C  
TC = 25°C  
15  
V/ns  
W
Features  
1000  
z
International Standard Packages  
High Current Handling Capability  
Fast Intrinsic Diode  
Avalanche Rated  
Fast Intrinsic Diode  
TJ  
-55 ... +175  
175  
°C  
°C  
°C  
z
z
z
z
z
TJM  
Tstg  
-55 ... +175  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
Low RDS(on)  
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Advantages  
Weight  
TO-247  
TO-268  
6
4
g
g
z
Easy to Mount  
Space Savings  
z
z
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
100  
2.0  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 250μA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
4.0  
z
Synchronous Recification  
DC-DC Converters  
Battery Chargers  
Switch-Mode and Resonant-Mode  
z
±200 nA  
z
IDSS  
25 μA  
z
TJ = 150°C  
VGS = 10V, ID = 100A, Notes 1 & 2  
1.75 mA  
Power Supplies  
DC Choppers  
AC Motor Drives  
Uninterruptible Power Supplies  
z
RDS(on)  
3.5 mΩ  
z
z
z
High Speed Power Switching  
Applications  
DS100237A(5/12)  
© 2012 IXYS CORPORATION, All Rights Reserved  

与IXFT320N10T2相关器件

型号 品牌 获取价格 描述 数据表
IXFT32N100XHV LITTELFUSE

获取价格

Power Field-Effect Transistor,
IXFT32N50 IXYS

获取价格

HiPerFET Power MOSFETs
IXFT32N50Q IXYS

获取价格

HiPerFET⑩ Power MOSFETs Q-Class
IXFT32N50Q LITTELFUSE

获取价格

功能与特色: 应用: 优点:
IXFT340N075T2 IXYS

获取价格

TrenchT2 HiPerFET Power MOSFET
IXFT36N50P IXYS

获取价格

PolarHV HiPerFET Power MOSFET
IXFT36N50P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFT36N55Q LITTELFUSE

获取价格

Power Field-Effect Transistor, 36A I(D), 550V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IXFT36N55Q IXYS

获取价格

Power Field-Effect Transistor, 36A I(D), 550V, 0.16ohm, 1-Element, N-Channel, Silicon, Met
IXFT36N60P IXYS

获取价格

PolarHV HiPerFET Power MOSFET