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IXFT42N50P2 PDF预览

IXFT42N50P2

更新时间: 2023-12-06 20:13:16
品牌 Logo 应用领域
力特 - LITTELFUSE /
页数 文件大小 规格书
5页 154K
描述
功能与特色: 优点: 应用:

IXFT42N50P2 数据手册

 浏览型号IXFT42N50P2的Datasheet PDF文件第2页浏览型号IXFT42N50P2的Datasheet PDF文件第3页浏览型号IXFT42N50P2的Datasheet PDF文件第4页浏览型号IXFT42N50P2的Datasheet PDF文件第5页 
Polar2TM HiperFETTM  
Power MOSFET  
VDSS = 500V  
ID25 = 42A  
RDS(on) 145mΩ  
IXFH42N50P2  
IXFT42N50P2  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-247 (IXFH)  
G
D
Symbol  
VDSS  
Test Conditions  
Maximum Ratings  
D (Tab)  
S
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGS = 1MΩ  
500  
500  
V
V
VDGR  
TO-268 (IXFT)  
VGSS  
VGSM  
Continuous  
Transient  
± 30  
± 40  
V
V
G
ID25  
IDM  
TC = 25°C  
42  
A
A
S
TC = 25°C, Pulse Width Limited by TJM  
126  
D (Tab)  
IA  
TC = 25°C  
TC = 25°C  
42  
A
J
EAS  
1.4  
G = Gate  
D
= Drain  
S = Source  
Tab = Drain  
dv/dt  
PD  
IS IDM, VDD VDSS, TJ 150°C  
TC = 25°C  
15  
V/ns  
W
830  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
z
International Standard Packages  
Fast Intrinsic Diode  
Avalanche Rated  
Low RDS(ON) and QG  
Low Package Inductance  
TL  
Tsold  
1.6mm (0.062in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
z
z
z
Md  
Mounting Torque (TO-247)  
1.13 / 10  
Nm/lb.in.  
Weight  
TO-247  
TO-268  
6
4
g
g
Advantages  
z
High Power Density  
Easy to Mount  
Space Savings  
z
z
Symbol  
Test Conditions  
Characteristic Values  
(TJ = 25°C Unless Otherwise Specified)  
Min.  
500  
2.5  
Typ.  
Max.  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 1mA  
VDS = VGS, ID = 4mA  
VGS = ±30V, VDS = 0V  
VDS = VDSS, VGS = 0V  
V
V
Applications  
4.5  
z
Switch-Mode and Resonant-Mode  
±100 nA  
Power Supplies  
DC-DC Converters  
Laser Drivers  
AC and DC Motor Drives  
z
IDSS  
10 μA  
z
TJ = 125°C  
1 mA  
z
z
Robotics and Servo Controls  
RDS(on)  
VGS = 10V, ID = 0.5 • ID25, Note 1  
145 mΩ  
DS100255A(9/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

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