Datasheet > IXFK26N60Q

IXFK26N60Q

更新时间： 2024-11-20 22:11:15

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
2页	105K
描述
HiPerFET Power MOSFETs Q-Class

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中文翻译

获取价格

数据手册

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IXFK26N60Q 数据手册

Advance Technical Information

HiPerFET^TM

Power MOSFETs

Q-Class

IXFK 26N60Q

IXFX 26N60Q

= 600 V

26 A

= 0.25 Ω

DSS

D25

DS(on)

t ≤ 250 ns

N-ChannelEnhancementMode

AvalancheRated, Highdv/dt, LowQ_g

Symbol

TestConditions

Maximum Ratings

PLUS247^TM(IXFX)

V_DSS

V_DGR

T_J= 25°C to 150°C

T_J= 25°C to 150°C; R_GS= 1 MΩ

600

V_GS

V_GSM

Continuous

Transient

±20

±30

D (TAB)

I_D25

I_DM

I_AR

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

T_C= 25°C

104

E_AR

E_AS

T_C= 25°C

1.5

dv/dt

I_S≤ I_DM, di/dt ≤ 100 A/µs, V_DD≤ V_DSS

T_J≤ 150°C, R_G= 2 Ω

V/ns

TO-264 AA (IXFK)

P_D

T_C= 25°C

360

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

D (TAB)

T_L

1.6 mm (0.063 in) from case for 10 s

300

°C

G = Gate

S = Source

D = Drain

TAB = Drain

M_d

Mountingtorque

TO-264

0.9/6 Nm/lb.in.

Weight

PLUS-247

TO-264

Features

Low gate charge

International standard packages

Epoxy meet UL 94 V-0, flammability

classification

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

min. typ. max.

Low R_{DS (on)}HDMOS^TMprocess

Rugged polysilicon gate cell structure

Avalanche energy and current rated

Fast intrinsic Rectifier

V_DSS

V_GS= 0 V, I_D= 250µA

600

2.5

V_GS(th)

V_DS= V_GS, I_D= 4 mA

4.5

I_GSS

I_DSS

V_GS= ±20 V_DC, V_DS= 0

±200 nA

25 µA

Advantages

V_DS= V_DSS

V_GS= 0 V

T_J= 25°C

T_J= 125°C

Easy to mount

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %

0.25

Ω

Space savings

High power density

98919 (05/02)

中文翻译

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