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IXFK170N10 PDF预览

IXFK170N10

更新时间: 2024-11-17 22:11:55
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IXYS /
页数 文件大小 规格书
4页 147K
描述
HiPerFET Power MOSFET

IXFK170N10 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-264AA
包装说明:PLASTIC PACKAGE-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.82外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):170 A最大漏极电流 (ID):170 A
最大漏源导通电阻:0.01 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):600 W
最大脉冲漏极电流 (IDM):680 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFK170N10 数据手册

 浏览型号IXFK170N10的Datasheet PDF文件第2页浏览型号IXFK170N10的Datasheet PDF文件第3页浏览型号IXFK170N10的Datasheet PDF文件第4页 
HiPerFETTM  
Power MOSFET  
VDSS  
ID25  
RDS(on)  
trr  
IXFN170N10  
IXFK170N10  
100V 170A 10mW  
100V 170A 10mW  
200ns  
200ns  
Single MOSFET Die  
TO-264 AA (IXFK)  
Preliminary data  
Symbol  
TestConditions  
MaximumRatings  
IXFK  
IXFN  
170N10  
170N10  
G
D (TAB)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C  
100  
100  
100  
100  
V
V
D
S

VGS  
Continuous  
Transient  
±20  
±30  
±20  
±30  
V
V
VGSM  
ID25  
miniBLOC, SOT-227 B (IXFN)  
E153432  
TC = 25°C  
TC = 125°C  
TC = 25°C  
TC = 25°C  
170ƒ  
76  
680  
170  
170  
NA  
680  
170  
A
S
ID125  
„
G
IDM‚  
A
A
IAR  
EAR  
TC = 25°C  
60  
5
60  
5
mJ  
S
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
V/ns  
D
PD  
TC = 25°C  
560  
600 W  
°C  
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +150°C  
150  
-55 ... +150°C  
Either Source terminal at miniBLOC can be used  
as Main or Kelvin Source  
TL  
1.6 mm (0.063 in) from case for 10 s  
300  
N/A  
°C  
Features  
· Internationalstandardpackages  
· Encapsulating epoxy meets  
UL94V-0,flammabilityclassification  
· miniBLOC withAluminiumnitride  
isolation  
VISOL  
50/60 Hz, RMS  
IISOL £ 1 mA  
t = 1 min  
t = 1 s  
N/A  
N/A  
2500  
3000  
V~  
V~  
Md  
Mountingtorque  
Terminalconnectiontorque  
0.9/6  
N/A  
1.5/13 Nm/lb.in.  
1.5/13 Nm/lb.in.  
· Low RDS (on) HDMOSTM process  
· Rugged polysilicon gate cell structure  
· Unclamped Inductive Switching (UIS)  
rated  
Weight  
10  
30  
g
· Low package inductance  
· Fast intrinsic Rectifier  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
Min.  
100  
Typ.  
0.077  
-0.183  
Max.  
Applications  
VDSS  
VGS= 0 V, ID = 3mA  
V
· DC-DC converters  
· Synchronousrectification  
· Battery chargers  
· Switched-modeandresonant-mode  
powersupplies  
VDSS temperature coefficient  
%/K  
VGS(th)  
VDS = VGS, ID = 8mA  
2
4
V
VGS(th) temperature coefficient  
%/K  
· DC choppers  
· Temperatureandlightingcontrols  
· Low voltage relays  
IGSS  
IDSS  
VGS= ±20V, VGS = 0V  
±200  
nA  
VDS= 0.8 • VDSS  
VGS= 0 V  
V
TJ = 25°C  
TJ = 125°C  
400  
2
mA  
mA  
Advantages  
RDS(on)  
VGS= 10 V, ID = 0.5 • ID25  
Pulse test, t £ 300 ms,  
duty cycle d £ 2 %  
10  
mW  
· Easy to mount  
· Space savings  
· High power density  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
97505D(7/00)  
1 - 4  

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