5秒后页面跳转
IXFK180N10 PDF预览

IXFK180N10

更新时间: 2024-11-18 04:22:47
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
4页 112K
描述
Single MOSFET Die

IXFK180N10 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-264AA包装说明:PLASTIC, TO-264, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:4.48
其他特性:AVALANCHE RATED雪崩能效等级(Eas):3000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:100 V最大漏极电流 (Abs) (ID):180 A
最大漏极电流 (ID):180 A最大漏源导通电阻:0.008 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):560 W
最大脉冲漏极电流 (IDM):720 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFK180N10 数据手册

 浏览型号IXFK180N10的Datasheet PDF文件第2页浏览型号IXFK180N10的Datasheet PDF文件第3页浏览型号IXFK180N10的Datasheet PDF文件第4页 
HiPerFETTM  
Power MOSFETs  
IXFK 180N10  
IXFX 180N10  
VDSS = 100 V  
ID25  
RDS(on)  
= 180 A  
= 8 mW  
Single MOSFET Die  
trr £ 250 ns  
Preliminary data sheet  
PLUS247TM  
(IXFX)  
Symbol  
TestConditions  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
100  
100  
V
V
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
D (TAB)  
G
D
ID25  
ID(RMS)  
IDM  
TC = 25°C (MOSFET chip capability)  
Externallead(currentlimit)  
TC = 25°C, Note 1  
180  
76  
720  
180  
A
A
A
A
TO-264 AA (IXFK)  
IAR  
TC = 25°C  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
3
mJ  
J
G
(TAB)  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
D
S
PD  
TJ  
TC = 25°C  
560  
W
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
Features  
• Internationalstandardpackages  
• Low RDS (on) HDMOSTM process  
• Ruggedpolysilicongatecellstructure  
• UnclampedInductiveSwitching(UIS)  
rated  
• Lowpackageinductance  
- easy to drive and to protect  
• Fastintrinsicrectifier  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mountingtorque  
TO-264  
0.9/6  
Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
• DC-DC converters  
• Batterychargers  
• Switched-modeandresonant-mode  
powersupplies  
• DC choppers  
• ACmotorcontrol  
Symbol  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VDSS  
VGS(th)  
IGSS  
VGS = 0 V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ±20 V, VDS = 0  
100  
2.0  
V
4.0 V  
• Temperatureandlightingcontrols  
±100nA  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 mA  
2 mA  
Advantages  
• PLUS 247TM package for clip or spring  
mounting  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
8 mW  
• Space savings  
• Highpowerdensity  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98552B(7/99)  
1 - 4  

IXFK180N10 替代型号

型号 品牌 替代类型 描述 数据表
STD15NF10T4 STMICROELECTRONICS

功能相似

N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET
STP120NF10 STMICROELECTRONICS

功能相似

N-CHANNEL 100V - 0.009 W - 120A DPAK/TO-220 STripFET II POWER MOSFET
STP80NF10 STMICROELECTRONICS

功能相似

N-CHANNEL 100V - 0.012ohm - 80A D2PAK LOW GAT

与IXFK180N10相关器件

型号 品牌 获取价格 描述 数据表
IXFK180N10_09 IXYS

获取价格

HiperFET Power MOSFETs
IXFK180N15P IXYS

获取价格

Polar HiPerFET Power MOSFET
IXFK180N15P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFK180N25T IXYS

获取价格

GigaMOS Power MOSFET
IXFK180N25T LITTELFUSE

获取价格

沟槽栅功率MOSFET适用于低电压/高电流应用,所需的RDS(on)极低,因此确保了非常低
IXFK185N10 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 185A I(D) | TO-264AA
IXFK200N10P IXYS

获取价格

Polar HiPerFET Power MOSFET
IXFK200N10P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFK20N120 IXYS

获取价格

HiPerFET Power MOSFETs
IXFK20N120P IXYS

获取价格

Polar Power MOSFET HiPerFET