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IXFK24N100 PDF预览

IXFK24N100

更新时间: 2024-11-04 22:11:55
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
2页 101K
描述
HiPerRF Power MOSFETs

IXFK24N100 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:TO-264AA
包装说明:TO-264, 3 PIN针数:3
Reach Compliance Code:compliant风险等级:8.5
Is Samacsys:N其他特性:AVALANCHE RATED
雪崩能效等级(Eas):3000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:1000 V
最大漏极电流 (Abs) (ID):24 A最大漏极电流 (ID):24 A
最大漏源导通电阻:0.39 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):560 W最大脉冲漏极电流 (IDM):96 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFK24N100 数据手册

 浏览型号IXFK24N100的Datasheet PDF文件第2页 
Advance Technical Information  
HiPerRFTM  
Power MOSFETs  
F-Class: MegaHertz Switching  
IXFX 24N100F VDSS = 1000 V  
IXFK 24N100F ID25 24 A  
=
RDS(on) = 0.39 Ω  
N-ChannelEnhancementMode  
Avalanche Rated, Low Qg, Low Intrinsic Rg  
High dV/dt, Low trr  
t 250 ns  
rr  
PLUS247TM
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
T
T
= 25°C to 150°C  
= 25°C to 150°C; R = 1 MΩ  
1000  
1000  
V
V
(TAB)  
J
J
G
D
GS  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
TO-264AA(IXFK)  
ID25  
IDM  
IAR  
T
= 25°C  
24  
96  
24  
A
A
A
C
T
= 25°C, pulse width limited by T  
= 25°C  
C
JM  
G
T
C
D
S
(TAB)  
EAR  
EAS  
T
= 25°C  
= 25°C  
60  
3.0  
mJ  
J
C
T
C
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
dv/dt  
I
I , di/dt 100 A/µs, V V  
10  
V/ns  
S
DM  
DD  
DSS  
T
150°C, R = 2 Ω  
J
G
Features  
PD  
TJ  
T
= 25°C  
560  
W
C
l
RF capable MOSFETs  
-55 ... +150  
°C  
l
l
l
l
Double metal process for low gate  
resistance  
Unclamped Inductive Switching (UIS)  
rated  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Low package inductance  
- easy to drive and to protect  
Fast intrinsic rectifier  
Md  
Mounting torque  
TO-264  
0.4/6 Nm/lb.in.  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
l
DC-DC converters  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(T = 25°C, unless otherwise specified)  
l
Switched-mode and resonant-mode  
power supplies, >500kHz switching  
J
min. typ. max.  
l
DC choppers  
VGS = 0 V, ID = 1mA  
VDS = VGS, ID = 8mA  
1000  
3.0  
V
l
Pulsegeneration  
l
Laser drivers  
VGS(th)  
IGSS  
5.5 V  
V
= ±20 V, V = 0  
±200 nA  
GS  
DS  
Advantages  
IDSS  
V
V
= V  
= 0 V  
T = 25°C  
100 µA  
3 mA  
DS  
DSS  
J
l
TM  
PLUS 247 package for clip or spring  
T
= 125°C  
GS  
J
mounting  
RDS(on)  
V
Note 1  
= 10 V, I = 0.5 I  
0.39  
l
l
GS  
D
D25  
Space savings  
High power density  
98874 (1/02)  
© 2002 IXYS All rights reserved  

IXFK24N100 替代型号

型号 品牌 替代类型 描述 数据表
APT10040LVRG MICROSEMI

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