Datasheet > IXFK180N10_09

IXFK180N10_09

更新时间： 2022-11-10 23:32:11

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	148K
描述
HiperFET Power MOSFETs

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数据手册

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IXFK180N10_09 数据手册

HiperFET^TMPower

MOSFETs

V_DSS= 100V

I_D25= 180A

R_DS(on)≤ 8mΩ

IXFK180N10

IXFX180N10

Single MOSFET Die

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-264 (IXFK)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

100

V_DGR

(TAB)

V_GSS

V_GSM

Continuous

Transient

±20

±30

PLUS247 (IXFX)

I_D25

T_C= 25°C ( Chip Capabitlty)

180

I_LRMS

I_DM

Leads Current Limit, RMS

T_C= 25°C, Pulse Width Limited by T_JM

160

720

I_A

E_AS

T_C= 25°C

180

(TAB)

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

G = Gate

S = Source

= Drain

560

TAB = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

^zInternational Standard Packages

^zHigh Current Handling Capability

^zAvalanche Rated

M_d

Mounting Force

MountingTorque

(PLUS247)

(TO-264)

20..120/4.5..27

N/lb.

Nm/lb.in.

1.13/10

Low R_DS(on)HDMOS^TMProcess

Weight

PLUS247

TO-264

^zFast intrinsic diode

^zLow Package Inductance

Advantages

Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, Unless Otherwise Specified)

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20V, V_DS= 0V

100

2.0

Applications

4.0

^zDC-DC Converters

^zBattery Chargers

±100 nA

^zSwitched-Mode and Resonant-Mode

Power Supplies

I_DSS

V_DS= V_DSS

V_GS= 0V

100 μA

T_J= 125°C

2 mA

^zDC Choppers

^zAC Motor Drives

^zTemperature and Lighting Controls

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

8 mΩ

DS98552D(02/09)

12 3 4 5

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