Datasheet > IXFK180N25T

IXFK180N25T

更新时间： 2024-01-03 09:50:10

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
7页	204K
描述
沟槽栅功率MOSFET适用于低电压/高电流应用，所需的RDS(on)极低，因此确保了非常低的功率耗损。再结合广泛的工作结温范围（从-40 °C到175 °C），这些产品非常适合汽车应用以及其他处

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IXFK180N25T 数据手册

Preliminary Technical Information

GigaMOS^TM

Power MOSFET

V_DSS= 250V

I_D25= 180A

R_DS(on) 12.9m

IXFK180N25T

IXFX180N25T

t_rr

 200ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-264 (IXFK)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

250

Tab

V_GSS

V_GSM

Continuous

Transient

 20

 30

PLUS247 (IXFX)

I_D25

I_L(RMS)

I_DM

T_C= 25C

External Lead Current Limit

T_C= 25C, Pulse Width Limited by T_JM

180

160

500

I_A

E_AS

T_C= 25C

Tab

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 150°C

T_C= 25C

V/ns

G = Gate

S = Source

= Drain

1390

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

^International Standard Packages

^High Current Handling Capability

^Fast Intrinsic Diode

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in

N/lb

20..120 /4.5..27

^Avalanche Rated



Weight

TO-264

PLUS247

Low R_DS(on)

Advantages



Easy to Mount

Space Savings

High Power Density

Symbol

Test Conditions

Characteristic Values



(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.



BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS=  20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

250

Applications

3.0

5.0

^DC-DC Converters

^Battery Chargers

200 nA

^Switched-Mode and Resonant-Mode

Power Supplies

I_DSS

50 A

2.5 mA

T_J= 125C

^DC Choppers

^AC Motor Drives

R_DS(on)

V_GS= 10V, I_D= 90A, Note 1

12.9 m

^Uninterruptible Power Supplies

^High Speed Power Switching

Applications

DS100129A(09/14)

12 3 4 5 6 7

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