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IXFK240N15T2 PDF预览

IXFK240N15T2

更新时间: 2024-01-16 08:18:20
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
6页 180K
描述
GigaMOS TrenchT2 HiperFET Power MOSFET

IXFK240N15T2 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.75
Base Number Matches:1

IXFK240N15T2 数据手册

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Advance Technical Information  
GigaMOSTM TrenchT2  
HiperFETTM  
Power MOSFET  
VDSS = 150V  
ID25 = 240A  
RDS(on) 5.2mΩ  
IXFK240N15T2  
IXFX240N15T2  
trr  
140ns  
N-Channel Enhancement Mode  
Avalanche Rated  
TO-264 (IXFK)  
Fast Intrinsic Diode  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
150  
150  
V
V
D
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXFX)  
ID25  
IL(RMS)  
IDM  
TC = 25°C (Chip Capability)  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
240  
160  
600  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
120  
2
A
J
(TAB)  
PD  
TC = 25°C  
1250  
20  
W
G = Gate  
D
= Drain  
dV/dt  
IS IDM, VDD VDSS, TJ 175°C  
V/ns  
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z Avalanche Rated  
20..120 /4.5..27  
z
Low RDS(on)  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 8mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
150  
V
V
z
2.5  
5.0  
Synchronous Recification  
z DC-DC Converters  
z Battery Chargers  
± 200 nA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
z DC Choppers  
z AC Motor Drives  
IDSS  
25 μA  
3 mA  
TJ = 150°C  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
4.1  
5.2 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
© 2009 IXYS CORPORATION, All Rights Reserved  
DS100191(09/09)  

IXFK240N15T2 替代型号

型号 品牌 替代类型 描述 数据表
IXFX240N15T2 IXYS

类似代替

GigaMOS TrenchT2 HiperFET Power MOSFET

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