Datasheet > IXFK24N100Q3

IXFK24N100Q3

更新时间： 2024-02-26 05:05:03

品牌	Logo	应用领域
IXYS		局域网开关脉冲晶体管
页数	文件大小	规格书
5页	126K
描述
Power Field-Effect Transistor, 24A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3

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中文翻译

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技术参数
数据手册
替代型号

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IXFK24N100Q3 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.46

IXFK24N100Q3 数据手册

Advance Technical Information

HiperFET^TM

Power MOSFETs

Q3-Class

V_DSS= 1000V

I_D25= 24A

IXFK24N100Q3

IXFX24N100Q3

R_DS(on)≤ 440mΩ

t_rr

≤ 300ns

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXFK)

Fast Intrinsic Rectifier

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

V_DGR

Tab

V_GSS

V_GSM

Continuous

Transient

±30

±40

PLUS247 (IXFX)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, Pulse Width Limited by T_JM

I_A

T_C= 25°C

E_AS

Tab

dv/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

G = Gate

S = Source

= Drain

1000

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

Features

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

Low Intrinsic Gate Resistance

Low Package Inductance

Fast Intrinsic Rectifier

Low R_DS(on)and Q_G

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in.

N/lb.

20..120 /4.5..27

Weight

TO-264

PLUS247

Advantages

High Power Density

Easy to Mount

Space Savings

Symbol

Test Conditions

Characteristic Values

Applications

(T_J= 25°C Unless Otherwise Specified)

Min.

1000

3.5

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 1mA

V_DS= V_GS, I_D= 4mA

V_GS= ±30V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

6.5

±200 nA

Power Supplies

DC Choppers

Temperature and Lighting Controls

I_DSS

25 μA

1.5 mA

T_J= 125°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

440 mΩ

DS100393(10/11)

12 3 4 5

中文翻译

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IXFK24N100Q3 替代型号

型号	品牌	替代类型	描述	数据表
IXTX24N100	IXYS	功能相似	Power Field-Effect Transistor, 24A I(D), 1000V, 0.4ohm, 1-Element, N-Channel, Silicon, Met
IXFX24N100Q3	IXYS	功能相似	Power Field-Effect Transistor, 24A I(D), 1000V, 0.44ohm, 1-Element, N-Channel, Silicon, Me

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