5秒后页面跳转
IXFK24N90Q PDF预览

IXFK24N90Q

更新时间: 2024-11-04 22:41:03
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 89K
描述
HiPerFET Power MOSFETs Q-CLASS

IXFK24N90Q 技术参数

是否无铅: 不含铅生命周期:Transferred
零件包装代码:TO-264AA包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.75其他特性:AVALANCHE RATED
雪崩能效等级(Eas):2500 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:900 V
最大漏极电流 (ID):24 A最大漏源导通电阻:0.45 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):96 A认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFK24N90Q 数据手册

 浏览型号IXFK24N90Q的Datasheet PDF文件第2页 
HiPerFETTM  
Power MOSFETs  
Q-CLASS  
IXFK 24N90Q  
IXFX 24N90Q  
VDSS  
ID25  
=
=
900 V  
24 A  
RDS(on) = 0.45 W  
Single MOSFET Die  
trr £ 250 ns  
N-ChannelEnhancementMode  
AvalancheRated, LowQg,  
High dV/dt, Low trr  
PLUS247TM
Preliminary data sheet  
(TAB)  
G
Symbol  
TestConditions  
Maximum Ratings  
D
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
900  
900  
V
V
TO-264AA(IXFK)  
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
G
D
(TAB)  
ID25  
IDM  
IAR  
TC = 25°C  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
24  
96  
24  
A
A
A
S
G = Gate  
D = Drain  
S = Source  
TAB = Drain  
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
2.5  
mJ  
J
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
Features  
l IXYS advanced low Qg process  
l Low gate charge and capacitances  
- easier to drive  
PD  
TJ  
TC = 25°C  
500  
W
-55 ... +150  
°C  
- faster switching  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l International standard packages  
l Low RDS (on)  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
l Rated for unclamped Inductive load  
switching (UIS)  
Md  
Mounting torque  
TO-264  
0.4/6  
Nm/lb.in.  
rated  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
l Molding epoxies meet UL 94 V-0  
flammability classification  
Applications  
l
DC-DC converters  
Battery chargers  
Switched-mode and resonant-mode  
Symbol  
TestConditions  
Characteristic Values  
l
(TJ = 25°C, unless otherwise specified)  
l
min. typ. max.  
power supplies  
DC choppers  
l AC motor control  
VDSS  
VGS = 0 V, ID = 250uA  
900  
2.5  
V
l
VGS(th)  
VDS = VGS, ID = 4mA  
4.5 V  
l
Temperature and lighting controls  
IGSS  
VGS = ±20 V, VDS = 0  
±100 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
100 mA  
2 mA  
l
PLUS 247TM package for clip or spring  
TJ = 125°C  
mounting  
Space savings  
l
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
0.45 W  
l
High power density  
© 2000 IXYS All rights reserved  
98679B (08/00)  

IXFK24N90Q 替代型号

型号 品牌 替代类型 描述 数据表
IXFK26N90 IXYS

类似代替

HiPerFET Power MOSFETs
IXFX24N90Q IXYS

类似代替

HiPerFET Power MOSFETs Q-CLASS
STW21N90K5 STMICROELECTRONICS

功能相似

N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-p

与IXFK24N90Q相关器件

型号 品牌 获取价格 描述 数据表
IXFK250N10P IXYS

获取价格

Polar HiPerFET Power MOSFET
IXFK250N10P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFK25N80 IXYS

获取价格

HiPerFETTM Power MOSFETs
IXFK25N90 IXYS

获取价格

HiPerFET Power MOSFETs
IXFK260N17T IXYS

获取价格

GigaMOS Power MOSFET
IXFK26N100P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFK26N100P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFK26N120P IXYS

获取价格

Polar Power MOSFET HiPerFET
IXFK26N120P LITTELFUSE

获取价格

功能与特色: 优点: 应用:
IXFK26N60Q IXYS

获取价格

HiPerFET Power MOSFETs Q-Class