Datasheet > IXFK250N10P

IXFK250N10P

更新时间： 2024-11-06 14:56:23

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	162K
描述
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中文翻译

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数据手册

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IXFK250N10P 数据手册

Polar^TMHiPerFET^TM

Power MOSFET

V_DSS= 100V

I_D25= 250A

R_DS(on)≤ 6.5mΩ

IXFK250N10P

IXFX250N10P

t_rr

≤ 200ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-264 (IXFK)

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

100

Tab

V_GSS

V_GSM

Continuous

Transient

± 20

± 30

PLUS247 (IXFX)

I_D25

I_LRMS

I_DM

T_C= 25°C (Chip Capability)

Lead Current Limit, RMS

250

160

700

T_C= 25°C, Pulse Width Limited by T_JM

I_A

T_C= 25°C

125

Tab

E_AS

P_D

T_C= 25°C

1250

G = Gate

S = Source

= Drain

Tab = Drain

dv/dt

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

V/ns

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

Features

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10s

300

260

°C

^zDynamic dv/dt Rating

^zAvalanche Rated

M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in.

N/lb.

^zFast Intrinsic Diode

^zLow Q_Gand R_DS(on)

20..120 /4.5..27

^zLow Package Inductance

Weight

TO-264

PLUS247

Advantages

Symbol

Test Conditions

Characteristic Values

Easy to Mount

Space Savings

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

V_GS= ± 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

100

3.0

5.0

Applications

^zDC-DC Converters

^zBattery Chargers

± 200 nA

50 μA

I_DSS

^zSwitch-Mode and Resonant-Mode

Power Supplies

T_J= 150°C

^zUninterrupted Power Supplies

^zAC Motor Drives

R_DS(on)

V_GS= 10V, I_D= 50A, Note 1

6.5 mΩ

^zHigh Speed Power Switching

Applications

DS100021A(6/10)

12 3 4 5 6

中文翻译

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