Datasheet > IXFK24N100_08

IXFK24N100_08

更新时间： 2024-11-05 11:14:03

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
4页	133K
描述
HiPerFET Power MOSFETs

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中文翻译

获取价格

数据手册

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IXFK24N100_08 数据手册

HiPerFET^TMPower

MOSFETs

V_DSS= 1000V

I_D25= 24A

R_DS(on)≤ 390mΩ

IXFK24N100

IXFX24N100

t_rr

≤ 250ns

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrisic Diode

TO-264 (IXFK)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GS= 1MΩ

1000

V_DGR

V_GSS

V_GSM

Continuous

Transient

±20

±30

(TAB)

I_D25

I_DM

T_C= 25°C

T_C= 25°C, pulse width limited by T_JM

PLUS247 (IXFX)

I_A

E_AS

T_C= 25°C

(TAB)

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 150°C

T_C= 25°C

V/ns

560

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

°C

G = Gate

S = Source

= Drain

TAB = Drain

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

Features

M_d

Mounting force

Mounting torque

(PLUS247)

(TO-264)

20..120/4.5..27

N/lb.

Nm/lb.in.

• International standard packages

• Low R_{DS (on)}HDMOS^TMprocess

• Rugged polysilicon gate cell structure

• Avalanche rated

1.13/10

Weight

PLUS247

TO-264

• Low package inductance

• Fast intrinsic rectifier

Applications

• DC-DC converters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

• DC choppers

• AC motor drives

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, unless otherwise specified)

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS= ±20V, V_DS= 0V

1000

3.0

5.5

• Temperature and lighting controls

±200 nA

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0V

100 μA

• PLUS 247^TMpackage for clip or spring

mounting

• Space savings

T_J= 125°C

2 mA

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

390 mΩ

• High power density

DS98598D(10/08)

12 3 4

中文翻译

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