Datasheet > IXFK180N15P

IXFK180N15P

更新时间： 2023-12-06 20:13:14

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	245K
描述
功能与特色: 优点: 应用:

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中文翻译

获取价格

数据手册

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IXFK180N15P 数据手册

Polar^TMHiPerFET

Power MOSFET

N-Channel Enhancement Mode

Fast Intrinsic Diode

V_DSS= 150 V

I_D25= 180 A

IXFK 180N15P

IXFX 180N15P

R_DS(on)≤ 11 m Ω

t_rr

≤ 200 ns

Avalanche Rated

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25° C to 175° C

T_J= 25° C to 175° C; R_GS= 1 MΩ

150

V_DS

V_GSM

Continuous

Transient

TO-264 (IXFK)

I_D25

T_C=25° C

180

I_D(RMS)

I_DM

External lead current limit

T_C= 25° C, pulse width limited by T_JM

380

I_AR

T_C=25° C

TAB

E_AR

E_AS

T_C=25° C

100

dv/dt

P_D

I_S≤I_DM, di/dt ≤100 A/µs, V_DD≤V_DSS

T_J≤150° C, R_G= 4 Ω

V/ns

PLUS247 (IXFX)

T_C=25° C

830

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +150

°C

TAB

T_L

T_SOLD

1.6 mm (0.062 in.) from case for 10 s

Plastic body for 10 s

300

260

°C

G = Gate

D = Drain

S = Source

TAB = Drain

M_d

F_c

Mounting torque

Mounting Force

(IXFK)

(IXFX)

1.13/10 Nm/lb.in.

20..120/4.5..25

N/lb

Weight

TO-264 (IXFK)

PLUS247 (IXFX)

Features

Symbol

Test Conditions

Characteristic Values

International standard packages

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

(T_J= 25° C, unless otherwise specified)

Min. Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0 V, I_D= 250 µA

V_DS= V_GS, I_D= 4 mA

V_GS= 20 V_DC, V_DS= 0

150

2.5

5.0

200

Advantages

I_DSS

V_DS= V_DSS

V_GS= 0 V

250

µA

T_J= 150° C

Easy to mount

Space savings

R_DS(on)

V_GS= 10 V, I_D= 0.5 I_D25

Note 1

11 mΩ

High power density

DS99218E(01/06)

12 3 4 5 6

中文翻译

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