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IXFK180N085 PDF预览

IXFK180N085

更新时间: 2024-11-18 11:14:03
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
2页 51K
描述
HiPerFET Power MOSFETs

IXFK180N085 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-264
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.82其他特性:AVALANCHE RATED
雪崩能效等级(Eas):3000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:85 V
最大漏极电流 (Abs) (ID):180 A最大漏极电流 (ID):180 A
最大漏源导通电阻:0.007 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264JESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):560 W
最大脉冲漏极电流 (IDM):720 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON

IXFK180N085 数据手册

 浏览型号IXFK180N085的Datasheet PDF文件第2页 
Advanced Technical Information  
HiPerFETTM  
Power MOSFETs  
IXFK 180N085  
IXFX 180N085  
VDSS = 85 V  
ID25  
RDS(on)  
= 180 A  
= 7 mW  
Single MOSFET Die  
trr £ 250 ns  
PLUS 24
Symbol  
TestConditions  
MaximumRatings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MW  
85  
85  
V
V
D (TAB)  
G
D
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
ID(RMS)  
IDM  
TC = 25°C (MOSFET chip capability)  
Externalleadcurrentlimit  
TC = 25°C, Note 1  
180  
76  
720  
180  
A
A
A
A
TO-264 AA (IXFK)  
IAR  
TC = 25°C  
G
(TAB)  
D
S
EAR  
EAS  
TC = 25°C  
TC = 25°C  
60  
3
mJ  
J
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
dv/dt  
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS  
TJ £ 150°C, RG = 2 W  
5
V/ns  
PD  
TJ  
TC = 25°C  
560  
W
Features  
-55 ... +150  
°C  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
• Internationalstandardpackages  
• Low RDS (on) HDMOSTM process  
• Rugged polysilicon gate cell structure  
• UnclampedInductiveSwitching(UIS)  
rated  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mountingtorque  
TO-264  
0.9/6  
Nm/lb.in.  
• Low package inductance  
- easy to drive and to protect  
• Fast intrinsic rectifier  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
• DC-DC converters  
• Synchronousrectification  
• Battery chargers  
• Switched-modeandresonant-mode  
powersupplies  
• DC choppers  
• Temperatureandlightingcontrols  
• Low voltage relays  
Symbol  
VDSS  
TestConditions  
CharacteristicValues  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
VGS = 0 V, ID = 3mA  
85  
V
VGS(th)  
IGSS  
VDS = VGS, ID = 8mA  
2.0  
4.0 V  
VGS = ±20 V, VDS = 0  
±100nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ = 25°C  
TJ = 125°C  
100 mA  
2 mA  
• PLUS 247TM package for clip or spring  
mounting  
• Space savings  
• High power density  
RDS(on)  
VGS = 10 V, ID = 0.5 • ID25  
Note 1  
7 mW  
IXYS reserves the right to change limits, test conditions, and dimensions.  
© 2000 IXYS All rights reserved  
98637(7/99)  
1 - 2  

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