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IXFK170N20T PDF预览

IXFK170N20T

更新时间: 2024-11-05 05:39:55
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IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 122K
描述
GigaMOS Power MOSFET

IXFK170N20T 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-264AA
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:8.47Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):3000 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:200 V最大漏极电流 (Abs) (ID):170 A
最大漏极电流 (ID):170 A最大漏源导通电阻:0.011 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-264AA
JESD-30 代码:R-PSFM-T3JESD-609代码:e1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):1150 W
最大脉冲漏极电流 (IDM):470 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXFK170N20T 数据手册

 浏览型号IXFK170N20T的Datasheet PDF文件第2页浏览型号IXFK170N20T的Datasheet PDF文件第3页浏览型号IXFK170N20T的Datasheet PDF文件第4页浏览型号IXFK170N20T的Datasheet PDF文件第5页 
Advance Technical Information  
GigaMOSTM  
Power MOSFET  
VDSS = 200V  
ID25 = 170A  
RDS(on) 11mΩ  
IXFK170N20T  
IXFX170N20T  
trr  
200ns  
N-Channel Enhancement Mode  
Avalanche Rated  
Fast Intrinsic Diode  
TO-264 (IXFK)  
Symbol  
Test Conditions  
Maximum Ratings  
G
VDSS  
VDGR  
TJ = 25°C to 175°C  
TJ = 25°C to 175°C, RGS = 1MΩ  
200  
200  
V
V
D
S
(TAB)  
VGSS  
VGSM  
Continuous  
Transient  
± 20  
± 30  
V
V
PLUS247 (IXFX)  
ID25  
IL(RMS)  
IDM  
TC = 25°C  
External Lead Current Limit  
TC = 25°C, Pulse Width Limited by TJM  
170  
160  
470  
A
A
A
IA  
EAS  
TC = 25°C  
TC = 25°C  
40  
3
A
J
(TAB)  
PD  
TC = 25°C  
1150  
20  
W
G = Gate  
D
= Drain  
dV/dt  
IS IDM, VDD VDSS, TJ 175°C  
V/ns  
S = Source  
TAB = Drain  
TJ  
TJM  
Tstg  
-55 ... +175  
175  
-55 ... +175  
°C  
°C  
°C  
Features  
z International Standard Packages  
z High Current Handling Capability  
z Fast Intrinsic Diode  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10s  
300  
260  
°C  
°C  
Md  
FC  
Mounting Torque (TO-264)  
Mounting Force (PLUS247)  
1.13/10  
Nm/lb.in.  
N/lb.  
z Avalanche Rated  
20..120 /4.5..27  
z
Low RDS(on)  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C Unless Otherwise Specified)  
Min.  
Typ.  
Max.  
Applications  
BVDSS  
VGS(th)  
IGSS  
VGS = 0V, ID = 3mA  
VDS = VGS, ID = 4mA  
VGS = ± 20V, VDS = 0V  
VDS = VDSS, VGS= 0V  
200  
V
V
z
2.5  
5.0  
Synchronous Recification  
z DC-DC Converters  
z Battery Chargers  
± 200 nA  
50 μA  
z Switched-Mode and Resonant-Mode  
Power Supplies  
z DC Choppers  
z AC Motor Drives  
IDSS  
TJ = 150°C  
3
mA  
RDS(on)  
VGS = 10V, ID = 60A, Note 1  
11 mΩ  
z Uninterruptible Power Supplies  
z High Speed Power Switching  
Applications  
DS100131(03/09)  
© 2009 IXYS CORPORATION, All rights reserved  

IXFK170N20T 替代型号

型号 品牌 替代类型 描述 数据表
IXFX170N20T IXYS

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