Datasheet > IXFK170N20P

IXFK170N20P

更新时间： 2024-09-21 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
6页	154K
描述
功能与特色: 优点: 应用:

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中文翻译

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数据手册

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IXFK170N20P 数据手册

Polar^TMHiperFET^TM

Power MOSFET

V_DSS= 200V

I_D25= 170A

R_DS(on) 14m

IXFK170N20P

IXFX170N20P

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Diode

TO-264 (IXFK)

Symbol

V_DSS

Test Conditions

Maximum Ratings

Tab

T_J= 25C to 175C

T_J= 25C to 175C, R_GS= 1M

200

V_DGR

PLUS247 (IXFX)

V_GSS

V_GSM

Continuous

Transient

20

30

I_D25

T_C= 25C

170

I_LRMS

I_DM

Lead Current Limit

T_C= 25C, Pulse Width Limited by T_JM

160

400

Tab

I_A

T_C= 25C

E_AS

G = Gate

S = Source

= Drain

Tab = Drain

dv/dt

P_D

I_S I_DM, V_DD V_DSS, T_J 175C

T_C= 25C

V/ns

1250

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

C

Features



Dynamic dv/dt Rating

Avalanche Rated

Fast Intrinsic Diode

Low Q_G



Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C

T_SOLD



Low R_DS(on)

M_d

Mounting Force (PLUS247)

Mounting Torque (TO-264)

20..120/4.5..27

1.13/10

N/lb

Nm/lb.in



Low Drain-to-Tab Capacitance

Low Package Inductance

Weight

PLUS247

TO-264

Advantages



Easy to Mount

Space Savings



Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25C, Unless Otherwise Specified)

Applications

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

V_GS= 20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

200

2.5



DC-DC Converters

Battery Chargers

Switch-Mode and Resonant-Mode

Power Supplies

Uninterrupted Power Supplies

AC Motor Drives

DC Choppers

High Speed Power Switching

4.5



200 nA



I_DSS

50 A

1 mA



T_J= 150C



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

14 m



Applications

DS100008A(03/14)

12 3 4 5 6

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