IXFK170N20P

更新时间： 2024-11-05 11:14:03

品牌	Logo	应用领域
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页数	文件大小	规格书
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描述
Polar Power MOSFET HiperFET

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中文翻译

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数据手册
替代型号

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IXFK170N20P 数据手册

Preliminary Technical Information

Polar^TMPower MOSFET

HiperFET^TM

IXFK170N20P

IXFX170N20P

V_DSS= 200V

I_D25= 170A

R_DS(on)≤ 14mΩ

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXFK)

Fast Intrinsic Diode

(TAB)

Symbol

V_DSS

Test Conditions

Maximum Ratings

T_J= 25°C to 175°C

T_J= 25°C to 175°C, R_GS= 1MΩ

200

V_DGR

PLUS247 (IXFX)

V_GSS

V_GSM

Continuous

Transient

±20

±30

I_D25

T_C= 25°C

170

I_LRMS

I_DM

Leads Current Limit, RMS

T_C= 25°C, pulse width limited by T_JM

400

(TAB)

I_A

T_C= 25°C

G = Gate

= Drain

E_AS

S = Source

TAB = Drain

dV/dt

P_D

I_S≤ I_DM, V_DD≤ V_DSS, T_J≤ 175°C

T_C= 25°C

V/ns

1250

Features

T_J

T_JM

T_stg

-55 ... +175

175

-55 ... +175

°C

• Fast intrinsic diode

• Avalanche Rated

• Low R_DS(ON)and Q_G

T_L

T_SOLD

1.6mm (0.062 in.) from case for 10s

Plastic body for 10s

300

260

°C

• Low package inductance

M_d

Mounting force

Mounting torque

(PLUS247)

(TO-264)

20..120/4.5..27

N/lb.

Nm/lb.in.

Advantages

1.13/10

• Low gate charge results in simple

drive requirement

• High power density

Weight

PLUS247

TO-264

Applications

• DC-DC coverters

• Battery chargers

• Switched-mode and resonant-mode

power supplies

Symbol

Test Conditions

Characteristic Values

Min. Typ. Max.

(T_J= 25°C, unless otherwise specified)

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 1mA

V_GS= ±20V, V_DS= 0V

200

3.0

• DC choppers

• AC and DC motor control

• Uninterrupted power supplies

• High speed power switching

applications

5.0

±200 nA

I_DSS

V_DS= V_DSS

V_GS= 0V

50 μA

1 mA

T_J= 150°C

R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

14 mΩ

DS100008(7/08)

12 3 4 5

中文翻译

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IXFK170N20P 替代型号

型号	品牌	替代类型	描述	数据表
IXFX170N20P	IXYS	功能相似	Polar Power MOSFET HiperFET

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