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IXFK120N25 PDF预览

IXFK120N25

更新时间: 2024-11-17 23:16:03
品牌 Logo 应用领域
IXYS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
2页 100K
描述
HiPerFET Power MOSFETs

IXFK120N25 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete包装说明:FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.82Is Samacsys:N
雪崩能效等级(Eas):3000 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):120 A最大漏极电流 (ID):120 A
最大漏源导通电阻:0.022 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-264AAJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):560 W
最大脉冲漏极电流 (IDM):480 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

IXFK120N25 数据手册

 浏览型号IXFK120N25的Datasheet PDF文件第2页 
Advance Technical Information  
HiPerFETTM  
Power MOSFETs  
IXFX 120N25  
IXFK 120N25  
VDSS = 250 V  
ID25 = 120 A  
RDS(on) = 22 mΩ  
Single MOSFET Die  
t 250 ns  
rr  
PLUS247
Symbol  
TestConditions  
Maximum Ratings  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
250  
250  
V
V
(TAB)  
G
D
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
ID25  
ID104  
IDM  
TC = 25°C (MOSFET chip capability)  
TC = 104°C (External lead capability)  
TC = 25°C, pulse width limited by TJM  
TC = 25°C  
120  
75  
480  
90  
A
TO-264AA(IXFK)  
A
A
A
IAR  
G
(TAB)  
D
S
EAR  
EAS  
TC = 25°C  
TC = 25°C  
64  
3
mJ  
J
G = Gate  
S = Source  
D = Drain  
TAB = Drain  
dv/dt  
IS IDM, di/dt 100 A/µs, VDD VDSS  
TJ 150°C, RG = 2 Ω  
5
V/ns  
PD  
TJ  
TC = 25°C  
560  
W
-55 ... +150  
°C  
Features  
l
International standard packages  
Low RDS (on) HDMOSTM process  
TJM  
Tstg  
150  
-55 ... +150  
°C  
°C  
l
l
l
Rugged polysilicon gate cell structure  
Unclamped Inductive Switching (UIS)  
rated  
TL  
1.6 mm (0.063 in.) from case for 10 s  
300  
°C  
Md  
Mountingtorque  
TO-264  
0.7/6 Nm/lb.in.  
l
l
Low package inductance  
- easy to drive and to protect  
Fast intrinsic rectifier  
Weight  
PLUS 247  
TO-264  
6
10  
g
g
Applications  
l
DC-DC converters  
l
Battery chargers  
Symbol  
VDSS  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
l
Switched-mode and resonant-mode  
power supplies  
min. typ. max.  
l
DC choppers  
VGS = 0 V, ID = 1mA  
250  
2.0  
V
l
AC motor control  
l
Temperature and lighting controls  
VGS(th)  
IGSS  
VDS = VGS, ID = 8mA  
4.0 V  
VGS = ±20 V, VDS = 0  
±200 nA  
Advantages  
IDSS  
VDS = VDSS  
VGS = 0 V  
TJ  
=
25°C  
50 µA  
3 mA  
l
PLUS 247TM package for clip or spring  
mounting  
TJ = 125°C  
l
RDS(on)  
VGS = 10 V, ID = 0.5 ID25  
Note 1  
22 mΩ  
Space savings  
l
High power density  
98912 (2/02)  
© 2002 IXYS All rights reserved  

IXFK120N25 替代型号

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