Advance Technical Information
GigaMOSTM
Power MOSFET
VDSS = 250V
ID25 = 140A
RDS(on) ≤ 17mΩ
IXFK140N25T
IXFX140N25T
trr
≤ 200ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
TO-264 (IXFK)
Symbol
Test Conditions
Maximum Ratings
VDSS
VDGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
250
250
V
V
G
D
S
(TAB)
VGSS
VGSM
Continuous
Transient
± 20
± 30
V
V
PLUS247 (IXFX)
ID25
IDM
TC = 25°C
TC = 25°C, Pulse Width Limited by TJM
140
380
A
A
IA
EAS
TC = 25°C
TC = 25°C
40
3
A
J
PD
TC = 25°C
960
20
W
(TAB)
dV/dt
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
V/ns
G = Gate
S = Source
D
= Drain
TJ
TJM
Tstg
-55 ... +150
150
-55 ... +150
°C
°C
°C
TAB = Drain
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
300
260
°C
°C
Features
z International Standard Packages
z High Current Handling Capability
z Fast Intrinsic Diode
Md
FC
Mounting Torque (TO-264)
Mounting Force (PLUS247)
1.13/10
Nm/lb.in.
N/lb.
20..120 /4.5..27
Weight
TO-264
PLUS247
10
6
g
g
z Avalanche Rated
z
Low RDS(on)
Advantages
z
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C Unless Otherwise Specified)
Min.
Typ.
Max.
z
BVDSS
VGS(th)
IGSS
VGS = 0V, ID = 3mA
VDS = VGS, ID = 4mA
VGS = ± 20V, VDS = 0V
VDS = VDSS, VGS= 0V
250
V
V
Applications
2.5
5.0
z DC-DC Converters
z Battery Chargers
± 200 nA
50 µA
z Switched-Mode and Resonant-Mode
Power Supplies
IDSS
TJ = 125°C
3
mA
z DC Choppers
z AC Motor Drives
RDS(on)
VGS = 10V, ID = 60A, Note 1
17 mΩ
z Uninterruptible Power Supplies
z High Speed Power Switching
Applications
DS100135(03/09)
© 2009 IXYS CORPORATION, All Rights Reserved