Datasheet > IXFK150N30P3

IXFK150N30P3

更新时间： 2024-11-18 20:55:35

品牌	Logo	应用领域
IXYS		/
页数	文件大小	规格书
5页	133K
描述
Power Field-Effect Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXFK150N30P3 技术参数

生命周期：	Transferred	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	4.44
Base Number Matches：	1

IXFK150N30P3 数据手册

Preliminary Technical Information

Polar3^TMHiPerFET^TM

Power MOSFET

V_DSS= 300V

I_D25= 150A

R_DS(on) 19m

IXFK150N30P3

IXFX150N30P3

t_rr

 250ns

N-Channel Enhancement Mode

Avalanche Rated

TO-264 (IXFK)

Fast Intrinsic Diode

Symbol

Test Conditions

Maximum Ratings

V_DSS

V_DGR

T_J= 25C to 150C

T_J= 25C to 150C, R_GS= 1M

300

Tab

V_GSS

V_GSM

Continuous

Transient

 20

 30

PLUS247 (IXFX)

I_D25

I_DM

T_C= 25C

T_C= 25C, Pulse Width Limited by T_JM

150

375

I_A

E_AS

T_C= 25C

Tab

P_D

T_C= 25C

1300

G = Gate

S = Source

= Drain

dv/dt

I_S I_DM, V_DD V_DSS, T_J 150°C

V/ns

Tab = Drain

T_J

T_JM

T_stg

-55 ... +150

150

-55 ... +150

C

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062in.) from Case for 10s

300

260

°C



Dynamic dv/dt Rating

Avalanche Rated

Fast Intrinsic Diode

Low Q_G



M_d

F_C

Mounting Torque (TO-264)

Mounting Force (PLUS247)

1.13/10

Nm/lb.in

N/lb

20..120 /4.5..27



Low R_DS(on)

Weight

TO-264

PLUS247



Low Drain-to-Tab Capacitance

Low Package Inductance

Advantages



Symbol

Test Conditions

Characteristic Values

Easy to Mount

Space Savings



(T_J= 25C Unless Otherwise Specified)

Min.

Typ.

Max.

BV_DSS

V_GS(th)

I_GSS

V_GS= 0V, I_D= 3mA

V_DS= V_GS, I_D= 8mA

V_GS=  20V, V_DS= 0V

V_DS= V_DSS, V_GS= 0V

300

Applications

3.0

5.0



DC-DC Converters

Battery Chargers

200 nA

25 A



I_DSS

Switch-Mode and Resonant-Mode

T_J= 125C

Power Supplies

Uninterrupted Power Supplies

AC Motor Drives

High Speed Power Switching



R_DS(on)

V_GS= 10V, I_D= 0.5 • I_D25, Note 1

19 m



Applications

DS100478A(12/13)

12 3 4 5

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