Datasheet > IXBT24N170

IXBT24N170

更新时间： 2024-11-06 21:14:11

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
6页	177K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

获取价格

技术参数
数据手册

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IXBT24N170 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.72
Base Number Matches：	1

IXBT24N170 数据手册

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 1700V

I_C110= 24A

V_CE(sat)≤ 2.5V

IXBT24N170

IXBH24N170

TO-268 (IXBT)

Symbol

V_CES

Test Conditions

Maximum Ratings

C (Tab)

T_J= 25°C to 150°C

1700

TO-247 (IXBH)

V_CGR

T_J= 25°C to 150°C, R_GE= 1MΩ

V_GES

V_GEM

Continuous

Transient

± 20

± 30

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

C (Tab)

230

G = Gate

E = Emiiter

= Collector

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 10Ω

I_CM= 50

Tab = Collector

(RBSOA)

Clamped Inductive Load

V_CES≤ 1360

P_C

T_C= 25°C

250

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

High Blocking Voltage

^zInternational Standard Packages

^zLow Conduction Losses

M_d

Mounting Torque (TO-247)

1.13/10

Nm/lb.in.

Weight

TO-268

TO-247

Advantages

^zLow Gate Drive Requirement

^zHigh Power Density

Symbol Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

1700

2.5

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

^zSwitch-Mode and Resonant-Mode

Power Supplies

5.0

^zUninterruptible Power Supplies (UPS)

^zLaser Generators

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

25 μA

500 μA

T_J= 125°C

^zCapacitor Discharge Circuits

^zAC Switches

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= I_C110, V_GE= 15V, Note 1

2.5

2.4

DS100190A(03/13)

12 3 4 5 6

中文翻译

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