Datasheet > IXBX50N360HV

IXBX50N360HV

更新时间： 2024-11-19 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管高压二极管
页数	文件大小	规格书
7页	268K
描述
BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMOSFET大获成功。这种高压器件是并联的理想选择，因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

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中文翻译

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数据手册

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IXBX50N360HV 数据手册

Advance Technical Information

BiMOSFET^TMMonolithic

Bipolar MOS Transistor

High Voltage,

V_CES= 3600V

I_C110= 50A

V_CE(sat) 2.9V

IXBX50N360HV

High Frequency

TO-247PLUS-HV

Symbol

V_CES

Test Conditions

Maximum Ratings

T_J= 25°C to 150°C

3600

V_CGR

T_J= 25°C to 150°C, R_GE= 1M

V_GES

V_GEM

Continuous

Transient

± 20

± 30

Tab

I_C25

I_C110

I_CM

T_C= 25°C

125

T_C= 110°C

T_C= 25°C, 1ms

420

G = Gate

= Emitter

C = Collector

Tab = Collector

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 5

Clamped Inductive Load

I_CM= 200

0.8 • V_CES

T_SC

V_GE= 15V, T_J= 125°C,

(SCSOA)

R_G= 10, V_CE=1500V, Non-Repetitive

μs

P_C

T_C= 25°C

660

T_J

- 55 ... +150

150

°C

Features

T_JM

T_stg



- 55 ... +150

High Blocking Voltage

High Voltage Package

Low Conduction Losses



T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

F_C

Mounting Force

20..120/4.5..27

N/lb

Advantages

Weight



Easy to Mount

Space Savings

High Power Density



Symbol Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

3600

3.0

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_CES

I_C

= 250μA, V_GE= 0V



Uninterruptible Power Supplies (UPS)

Switch-Mode and Resonant-Mode

I_C= 250μA, V_CE= V_GE

5.0



V_CE= 0.8 • V_CES, V_GE= 0V

25 μA

±200 nA

Power Supplies

Capacitor Discharge Circuits

Laser Generators



Note 2, T_J= 125°C

V_CE= 0V, V_GE= ± 20V

I_C= 50A, V_GE= 15V, Note 1

T_J= 125°C



I_GES

V_CE(SAT)

2.4

3.0

2.9

DS100624A(02/16)

12 3 4 5 6 7

中文翻译

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