Datasheet > IXBT32N300HV

IXBT32N300HV

更新时间： 2024-09-15 20:00:59

品牌	Logo	应用领域
IXYS		栅
页数	文件大小	规格书
6页	311K
描述
Insulated Gate Bipolar Transistor

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中文翻译

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技术参数
数据手册

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IXBT32N300HV 技术参数

是否无铅：	不含铅	生命周期：	Transferred
Reach Compliance Code：	compliant	风险等级：	5.73
Base Number Matches：	1

IXBT32N300HV 数据手册

Advance Technical Information

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 3000V

I_C110= 32A

V_CE(sat) 3.2V

IXBT32N300HV

IXBH32N300HV

TO-268HV (IXBT)

Symbol

Test Conditions

Maximum Ratings

V_CES

V_CGR

T_C= 25°C to 150°C

3000

T_J= 25°C to 150°C, R_GE= 1M

C (Tab)

V_GES

V_GEM

Continuous

Transient

± 20

± 30

TO-247HV (IXBH)

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

280

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 10

Clamped Inductive Load

I_CM= 80

V_CES 2400

C (Tab)

P_C

T_C= 25°C

400

T_J

-55 ... +150

150

°C

G = Gate

E = Emitter

= Collector

T_JM

T_stg

Tab = Collector

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

Plastic Body for 10s

300

260

°C

Features

M_d

Mounting Torque (TO-247HV)

1.13/10

Nm/lb.in.

Weight

TO-268HV

TO-247HV



High Blocking Voltage

High Voltage Packages



^Low Conduction Losses

Symbol Test Conditions

Characteristic Values

(T_J= 25°C Unless Otherwise Specified)

Min.

Typ.

Max.

Advantages

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

3000

2.5

^Low Gate Drive Requirement

^High Power Density

5.0

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

50 μA

T_J= 125°C

Applications:

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= 32A, V_GE= 15V, Note 1

2.8

3.5

3.2

^Switched-Mode and Resonant-Mode

Power Supplies

^Uninterruptible Power Supplies (UPS)

^Laser Generators

^Capacitor Discharge Circuits

^AC Switches

DS100706(02/16)

12 3 4 5 6

中文翻译

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