Datasheet > IXBX75N170

IXBX75N170

更新时间： 2024-11-06 12:28:19

品牌	Logo	应用领域
IXYS		晶体双极型晶体管
页数	文件大小	规格书
5页	185K
描述
BiMOSFETTM Monolithic Bipolar MOS Transistor

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中文翻译

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数据手册

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IXBX75N170 数据手册

Preliminary Technical Information

BiMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 1700V

I_C110= 75A

V_CE(sat)≤ 3.1V

IXBK75N170

IXBX75N170

TO-264 (IXBK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

1700

±20

V_CGR

V_GES

Tab

V_GEM

Transient

±30

PLUS247^TM(IXBX)

I_C25

I_LRMS

T_C= 25°C (Chip Capabilitty)

T_C= 25°C (Lead RMS Limit)

200

160

I_C110

I_CM

T_C= 110°C

T_C= 25°C, 1ms

580

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 1Ω

I_CM= 150

(RBSOA)

Clamped Inductive Load

V_CE< 0.8 • V_CES

Tab

P_C

T_C= 25°C

1040

G = Gate

E = Emitter

= Collector

T_J

-55 ... +150

150

°C

Tab = Collector

T_JM

T_stg

-55 ... +150

Features

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

^zInternational Standard Packages

^zHigh Blocking Voltage

^zHigh Current Handling Capability

^zAnti-Parallel Diode

M_d

F_C

Mounting Torque (TO-264 )

Mounting Force (PLUS247 )

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

Weight

TO-264

PLUS247

Advantages

^zHigh Power Density

^zLow Gate Drive Requirement

^zIntergrated Diode Can Be Used for

Protection

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

1700

2.5

Typ.

Max.

BV_CES

V_GE(th)

I_C= 250μA, V_GE= 0V

I_C= 1.5mA, V_CE= V_GE

5.5

Applications

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

25 μA

^zCapacitor Discharge

^zAC Switches

T_J= 125°C

2 mA

^zSwitch-Mode and Resonant-Mode

Power Supplies

I_GES

V_CE= 0V, V_GE= ± 20V

±100 nA

V_CE(sat)

I_C= I_C110, V_GE= 15V, Note 1

2.6

3.1

^zUPS

T_J= 125°C

^zAC Motor Drives

DS100167A(10/09)

12 3 4 5

中文翻译

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