Datasheet > IXCK36N250

IXCK36N250

更新时间： 2024-11-19 14:56:47

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管高压二极管
页数	文件大小	规格书
6页	218K
描述
BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMOSFET大获成功。这种高压器件是并联的理想选择，因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

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中文翻译

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数据手册

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IXCK36N250 数据手册

High Voltage

V_CES= 2500V

I_C110= 36A

V_CE(sat)≤ 3.3V

IXCH36N250

IXCK36N250

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

Extended FBSOA

TO-247 AD

Symbol

V_CES

Test Conditions

Maximum Ratings

T_C= 25°C to 150°C

2500

V_CGR

T_J= 25°C to 150°C, R_GE= 1MΩ

Tab

V_GES

V_GEM

Continuous

Transient

± 25

± 35

TO-264

I_C25

I_C110

I_CM

T_C= 25°C

T_C= 110°C

T_C= 25°C, 1ms

360

SSOA

(RBSOA)

V_GE= 15V, T_VJ= 125°C, R_G= 20Ω

Clamped Inductive Load

I_CM= 144

V_CE≤ 0.8 • V_CES

Tab

T_SC

V_GE= 15V, T_J= 125°C,

(SCSOA)

R_G= 82Ω, V_CE= 1250V, Non-Repetitive

μs

G = Gate

C = Collector

= Emitter

Tab = Collector

P_C

T_C= 25°C

595

T_J

-55 ... +150

150

°C

T_JM

T_stg

Features

-55 ... +150

High Blocking Voltage

High Peak Current Capability

T_L

T_SOLD

1.6mm (0.062 in.) from Case for 10s

Plastic Body for 10 seconds

300

260

°C

Anti-Parallel Diode

Low Saturation Voltage

Extended FBSOA and SCSOA

M_d

Mounting Torque

1.13/10

Nm/lb.in.

Weight

TO-247

TO-264

Advantages

Low Gate Drive Requirement

High Power Density

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

2500

4.0

Typ.

Max.

BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= V_CES, V_GE= 0V

Applications

6.5

Switch-Mode and Resonant-Mode

50 μA

Power Supplies

Uninterruptible Power Supplies (UPS)

Laser Generators

Capacitor Discharge Circuits

AC Switches

Protection Circuits

T_J= 125°C

1.75 mA

I_GES

V_CE= 0V, V_GE= ±25V

±100 nA

V_CE(sat)

I_C= 36A, V_GE= 15V, Note 1

2.6

3.0

3.3

DS100374A(9/11)

12 3 4 5 6

中文翻译

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