High Voltage
VCES = 2500V
IC110 = 36A
VCE(sat) ≤ 3.3V
IXCH36N250
IXCK36N250
BIMOSFETTM Monolithic
Bipolar MOS Transistor
Extended FBSOA
TO-247 AD
Symbol
VCES
Test Conditions
Maximum Ratings
TC = 25°C to 150°C
2500
2500
V
V
VCGR
TJ = 25°C to 150°C, RGE = 1MΩ
G
C
Tab
VGES
VGEM
Continuous
Transient
± 25
± 35
V
V
E
TO-264
IC25
IC110
ICM
TC = 25°C
73
36
A
A
A
TC = 110°C
TC = 25°C, 1ms
360
G
C
E
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 20Ω
Clamped Inductive Load
ICM = 144
VCE ≤ 0.8 • VCES
A
Tab
TSC
VGE = 15V, TJ = 125°C,
(SCSOA)
RG = 82Ω, VCE = 1250V, Non-Repetitive
10
μs
G = Gate
C = Collector
E
= Emitter
Tab = Collector
PC
TC = 25°C
595
W
TJ
-55 ... +150
150
°C
°C
°C
TJM
Tstg
Features
-55 ... +150
z
High Blocking Voltage
High Peak Current Capability
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
300
260
°C
°C
z
z
Anti-Parallel Diode
Low Saturation Voltage
Extended FBSOA and SCSOA
Md
Mounting Torque
1.13/10
Nm/lb.in.
z
z
Weight
TO-247
TO-264
6
10
g
g
Advantages
z
Low Gate Drive Requirement
High Power Density
Symbol
Test Conditions
Characteristic Values
z
(TJ = 25°C, Unless Otherwise Specified)
Min.
2500
4.0
Typ.
Max.
BVCES
VGE(th)
ICES
IC = 250μA, VGE = 0V
IC = 250μA, VCE = VGE
VCE = VCES, VGE = 0V
V
V
Applications
6.5
z
Switch-Mode and Resonant-Mode
50 μA
Power Supplies
Uninterruptible Power Supplies (UPS)
Laser Generators
Capacitor Discharge Circuits
AC Switches
Protection Circuits
TJ = 125°C
TJ = 125°C
1.75 mA
z
z
IGES
VCE = 0V, VGE = ±25V
±100 nA
z
VCE(sat)
IC = 36A, VGE = 15V, Note 1
2.6
3.0
3.3
V
V
z
z
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DS100374A(9/11)