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IXCP01N90E PDF预览

IXCP01N90E

更新时间: 2024-11-18 19:47:39
品牌 Logo 应用领域
IXYS 局域网开关脉冲晶体管
页数 文件大小 规格书
3页 112K
描述
Power Field-Effect Transistor, 900V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

IXCP01N90E 技术参数

是否无铅: 不含铅是否Rohs认证: 不符合
生命周期:Lifetime Buy零件包装代码:TO-220AB
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliant风险等级:5.84
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE AND RESISTOR
最小漏源击穿电压:900 V最大漏源导通电阻:0.08 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e0
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):40 W
最大脉冲漏极电流 (IDM):175 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

IXCP01N90E 数据手册

 浏览型号IXCP01N90E的Datasheet PDF文件第2页浏览型号IXCP01N90E的Datasheet PDF文件第3页 
VDSS = 900 V  
ID(limit) = 250mA  
IXCP 01N90E  
IXCY 01N90E  
Gate Controlled  
Current Limiter  
R
DS(on) = 80 Ω  
N-Channel,EnhancementMode  
D
G
S
Symbol  
TestConditions  
Maximum Ratings  
TO-252 (IXCY)  
TO-220 (IXCP)  
VDSS  
VDGR  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C; RGS = 1 MΩ  
900  
900  
V
V
TAB  
TAB  
G
VGS  
VGSM  
Continuous  
Transient  
±20  
±30  
V
V
S
PD  
TC = 25°C  
40  
W
TJ  
TJM  
Tstg  
-55 ... +150  
150  
-55 ... +150  
°C  
°C  
°C  
TL  
1.6 mm (0.062 in.) from case for 10 s  
300  
°C  
G
D
S
Md  
Mounting torque with 3.5mm screw (TO-220)  
0.55/5 Nm/lb.in.  
Weight  
TO-251/252 = 1 g, TO-220 = 4 g  
G = Gate,  
D = Drain,  
S = Source,  
TAB = Drain  
Symbol  
TestConditions  
Characteristic Values  
(TJ = 25°C, unless otherwise specified)  
min. typ. max.  
Features  
High output resistance in the saturated  
VDSS  
VGS(th)  
VGS = 0 V, ID = 25 µA  
VDS = VGS, ID = 25 µA  
900  
2.5  
V
V
mRuogdgeeodf HoDpeMraOtiSoTnM process  
Stable peak drain current limit  
High voltage current regulator  
International standard packages  
5
IGSS  
VGS = ±20 V, VDS = 0  
±50 nA  
10 µA  
IDSS  
VDS = VDSS; VGS = 0 V  
Applications  
RDS(on)  
V
= 10 V, ID = 50 mA  
80  
PGuSlse test, t 300 µs, duty cycle d 2 %  
Current regulation  
Over current and over voltage  
IDP  
Plateau Current; V  
= 10 V, VGS = 10V  
100  
130 mA  
Pulse test, t 300 DµSs, duty cycle d 2 %  
Lpirnoeteacrtiorengufolartsoernsitive loads  
98701-A (8/02)  
© 2002 IXYS All rights reserved  

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