5秒后页面跳转
IXCH36N250 PDF预览

IXCH36N250

更新时间: 2024-11-21 14:51:43
品牌 Logo 应用领域
力特 - LITTELFUSE
页数 文件大小 规格书
6页 192K
描述
Insulated Gate Bipolar Transistor,

IXCH36N250 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.73
Base Number Matches:1

IXCH36N250 数据手册

 浏览型号IXCH36N250的Datasheet PDF文件第2页浏览型号IXCH36N250的Datasheet PDF文件第3页浏览型号IXCH36N250的Datasheet PDF文件第4页浏览型号IXCH36N250的Datasheet PDF文件第5页浏览型号IXCH36N250的Datasheet PDF文件第6页 
High Voltage  
VCES = 2500V  
IC110 = 36A  
VCE(sat) 3.3V  
IXCH36N250  
IXCK36N250  
BIMOSFETTM Monolithic  
Bipolar MOS Transistor  
Extended FBSOA  
TO-247 AD  
Symbol  
VCES  
Test Conditions  
Maximum Ratings  
TC = 25°C to 150°C  
2500  
2500  
V
V
VCGR  
TJ = 25°C to 150°C, RGE = 1MΩ  
G
C
Tab  
VGES  
VGEM  
Continuous  
Transient  
± 25  
± 35  
V
V
E
TO-264  
IC25  
IC110  
ICM  
TC = 25°C  
73  
36  
A
A
A
TC = 110°C  
TC = 25°C, 1ms  
360  
G
C
E
SSOA  
(RBSOA)  
VGE = 15V, TVJ = 125°C, RG = 20Ω  
Clamped Inductive Load  
ICM = 144  
VCE 0.8 • VCES  
A
Tab  
TSC  
VGE = 15V, TJ = 125°C,  
(SCSOA)  
RG = 82Ω, VCE = 1250V, Non-Repetitive  
10  
μs  
G = Gate  
C = Collector  
E
= Emitter  
Tab = Collector  
PC  
TC = 25°C  
595  
W
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
TJM  
Tstg  
Features  
-55 ... +150  
z
High Blocking Voltage  
High Peak Current Capability  
TL  
TSOLD  
1.6mm (0.062 in.) from Case for 10s  
Plastic Body for 10 seconds  
300  
260  
°C  
°C  
z
z
Anti-Parallel Diode  
Low Saturation Voltage  
Extended FBSOA and SCSOA  
Md  
Mounting Torque  
1.13/10  
Nm/lb.in.  
z
z
Weight  
TO-247  
TO-264  
6
10  
g
g
Advantages  
z
Low Gate Drive Requirement  
High Power Density  
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
2500  
4.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 250μA, VGE = 0V  
IC = 250μA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
6.5  
z
Switch-Mode and Resonant-Mode  
50 μA  
Power Supplies  
Uninterruptible Power Supplies (UPS)  
Laser Generators  
Capacitor Discharge Circuits  
AC Switches  
Protection Circuits  
TJ = 125°C  
TJ = 125°C  
1.75 mA  
z
z
IGES  
VCE = 0V, VGE = ±25V  
±100 nA  
z
VCE(sat)  
IC = 36A, VGE = 15V, Note 1  
2.6  
3.0  
3.3  
V
V
z
z
© 2011 IXYS CORPORATION, All Rights Reserved  
DS100374A(9/11)  

与IXCH36N250相关器件

型号 品牌 获取价格 描述 数据表
IXCK36N250 LITTELFUSE

获取价格

BiMOSFET兼具MOSFET和IGBT的优势。 凭借非外延结构和新的制造工艺,BiMO
IXCP01M90S ETC

获取价格

Analog IC
IXCP01N90E IXYS

获取价格

Power Field-Effect Transistor, 900V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide S
IXCP02A35 IXYS

获取价格

Analog Circuit, 1 Func, PSFM3, TO-220AB, 3 PIN
IXCP02A35A IXYS

获取价格

Analog Circuit, 1 Func, PSFM3, TO-220AB, 3 PIN
IXCP02A45 IXYS

获取价格

Analog Circuit, 1 Func, PSFM3, TO-220AB, 3 PIN
IXCP02A45A IXYS

获取价格

Analog Circuit, 1 Func, PSFM3, TO-220AB, 3 PIN
IXCP02M35 IXYS

获取价格

Analog Circuit, 1 Func, PSFM3, TO-220AB, 3 PIN
IXCP02M35A IXYS

获取价格

Analog Circuit, 1 Func, PSFM3, TO-220AB, 3 PIN
IXCP02M45 IXYS

获取价格

Analog Circuit, 1 Func, PSFM3, TO-220AB, 3 PIN