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IXBX55N300 PDF预览

IXBX55N300

更新时间: 2024-11-06 12:27:43
品牌 Logo 应用领域
IXYS 晶体双极型晶体管功率控制瞄准线双极性晶体管PC局域网
页数 文件大小 规格书
6页 221K
描述
High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor

IXBX55N300 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:compliant
风险等级:8.48Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:684194
Samacsys Pin Count:3Samacsys Part Category:Transistor IGBT
Samacsys Package Category:Transistor Outline, VerticalSamacsys Footprint Name:TO-247 Ad
Samacsys Released Date:2020-01-15 09:49:58Is Samacsys:N
其他特性:LOW CONDUCTION LOSS外壳连接:COLLECTOR
最大集电极电流 (IC):130 A集电极-发射极最大电压:3000 V
配置:SINGLE WITH BUILT-IN DIODE门极发射器阈值电压最大值:5 V
门极-发射极最大电压:25 VJESD-30 代码:R-PSFM-T3
JESD-609代码:e1元件数量:1
端子数量:3最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):625 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):475 ns
标称接通时间 (ton):637 nsBase Number Matches:1

IXBX55N300 数据手册

 浏览型号IXBX55N300的Datasheet PDF文件第2页浏览型号IXBX55N300的Datasheet PDF文件第3页浏览型号IXBX55N300的Datasheet PDF文件第4页浏览型号IXBX55N300的Datasheet PDF文件第5页浏览型号IXBX55N300的Datasheet PDF文件第6页 
High Voltage, High Gain  
BiMOSFETTM  
VCES = 3000V  
IC110 = 55A  
VCE(sat) 3.2V  
IXBK55N300  
IXBX55N300  
Monolithic Bipolar  
MOS Transistor  
TO-264 (IXBK)  
Symbol  
VCES  
Test Conditions  
TJ = 25°C to 150°C  
TJ = 25°C to 150°C, RGE = 1MΩ  
Continuous  
Maximum Ratings  
G
C
E
3000  
3000  
±25  
V
V
V
V
Tab  
VCGR  
VGES  
PLUS247 (IXBX)  
VGEM  
Transient  
±35  
IC25  
TC = 25°C ( Chip Capability )  
TC = 25°C ( Lead RMS Limit )  
TC = 110°C  
130  
120  
55  
A
A
A
A
ILRMS  
IC110  
ICM  
G
TC = 25°C, 1ms  
600  
C
Tab  
E
SSOA  
VGE= 15V, TVJ = 125°C, RG = 2Ω  
ICM = 110  
A
(RBSOA)  
Clamped Inductive Load  
@0.8 VCES  
G = Gate  
E
= Emitter  
C = Collector  
Tab = Collector  
TSC  
VGE = 15V, TJ = 125°C,  
(SCSOA)  
RG = 10Ω, VCE = 1250V, Non-Repetitive  
10  
μs  
PC  
TC = 25°C  
625  
W
Features  
TJ  
-55 ... +150  
150  
°C  
°C  
°C  
z
TJM  
Tstg  
High Blocking Voltage  
International Standard Packages  
Low Conduction Losses  
z
z
-55 ... +150  
TL  
TSOLD  
Maximum Lead Temperature for Soldering  
1.6 mm (0.062 in.) from Case for 10  
300  
260  
°C  
°C  
z
z
High Current Handling Capability  
MOS Gate Turn-On  
Md  
FC  
Mounting Torque (TO-264 )  
Mounting Force (PLUS247 )  
1.13/10  
20..120/4.5..27  
Nm/lb.in.  
N/lb.  
- Drive Simplicity  
Weight  
TO-264  
PLUS247  
10  
6
g
g
Advantages  
z
Easy to Mount  
Space Savings  
High Power Density  
z
Symbol  
Test Conditions  
Characteristic Values  
z
(TJ = 25°C, Unless Otherwise Specified)  
Min.  
3000  
3.0  
Typ.  
Max.  
BVCES  
VGE(th)  
ICES  
IC = 1mA, VGE = 0V  
IC = 4mA, VCE = VGE  
VCE = VCES, VGE = 0V  
V
V
Applications  
5.0  
z
Uninterruptible Power Supplies (UPS)  
Switch-Mode and Resonant-Mode  
50 μA  
z
TJ = 125°C  
3 mA  
Power Supplies  
Capacitor Discharge Circuits  
Laser Generators  
z
IGES  
VCE = 0V, VGE = ± 25V  
±200 nA  
z
VCE(sat)  
IC = 55A, VGE = 15V, Note 1  
TJ = 125°C  
2.7  
3.3  
3.2  
V
V
DS100158A(11/11)  
© 2011 IXYS CORPORATION, All Rights Reserved  

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