Datasheet > IXBX28N300HV

IXBX28N300HV

更新时间： 2024-11-05 14:56:51

品牌	Logo	应用领域
力特 - LITTELFUSE		双极性晶体管高压二极管
页数	文件大小	规格书
6页	227K
描述
BiMOSFET兼具MOSFET和IGBT的优势。凭借非外延结构和新的制造工艺，BiMOSFET大获成功。这种高压器件是并联的理想选择，因为饱和电压和本征二极管的正向压降均具有正电压温度系数。

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中文翻译

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数据手册

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IXBX28N300HV 数据手册

Advance Technical Information

High Voltage, High Gain

BIMOSFET^TMMonolithic

Bipolar MOS Transistor

V_CES= 3000V

I_C110= 28A

V_CE(sat) 2.7V

IXBX28N300HV

TO-247PLUS-HV

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1M

Continuous

Maximum Ratings

3000

±20

V_CGR

V_GES

Tab

V_GEM

Transient

±30

I_C25

I_C110

I_CM

T_C= 25°C

G = Gate

C = Collector

= Emitter

T_C= 110°C

T_C= 25°C, 1ms

Tab = Collector

200

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 15

I_CM= 220

1500

(RBSOA)

Clamped Inductive Load

T_SC

V_GE= 15V, T_J= 125°C,

(SCSOA)

R_G= 52, V_CE=1250V, Non-Repetitive

μs

Features

P_C

T_C= 25°C

350



High Blocking Voltage

High Voltage Package

Low Conduction Losses



T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

Advantages

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C



Easy to Mount

Space Savings



F_C

Mounting Force

20..120/4.5..27

N/lb



High Power Density

Weight

Applications



Uninterruptible Power Supplies (UPS)

Switch-Mode and Resonant-Mode



Symbol

Test Conditions

Characteristic Values

Power Supplies

Capacitor Discharge Circuits

Laser Generators

(T_J= 25C, Unless Otherwise Specified)

Min.

3000

3.0

Typ.

Max.



BV_CES

V_GE(th)

I_CES

I_C= 250μA, V_GE= 0V

I_C= 250μA, V_CE= V_GE

V_CE= 0.8 • V_CES, V_GE= 0V

5.0

25 μA

T_J= 125C

1 mA

I_GES

V_CE= 0V, V_GE= ± 25V

±200 nA

V_CE(sat)

I_C= 28A, V_GE= 15V, Note 1

T_J= 125C

2.3

2.8

2.7

DS100593(05/14)

12 3 4 5 6

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