Datasheet > IXBX64N250

IXBX64N250

更新时间： 2024-09-16 19:59:35

品牌	Logo	应用领域
力特 - LITTELFUSE		栅
页数	文件大小	规格书
7页	193K
描述
Insulated Gate Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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IXBX64N250 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	unknown	风险等级：	5.28
Base Number Matches：	1

IXBX64N250 数据手册

High Voltage, High Gain

BiMOSFET^TM

V_CES= 2500V

I_C110= 64A

V_CE(sat)≤ 3.0V

IXBK64N250

IXBX64N250

Monolithic Bipolar

MOS Transistor

TO-264 (IXBK)

Symbol

V_CES

Test Conditions

T_J= 25°C to 150°C

T_J= 25°C to 150°C, R_GE= 1MΩ

Continuous

Maximum Ratings

2500

±25

Tab

V_CGR

PLUS247^TM(IXBX)

V_GES

V_GEM

Transient

±35

I_C25

T_C= 25°C (Chip Capability)

Lead Current Limit, RMS

T_C= 110°C

156

120

I_LRMS

I_C100

I_CM

Tab

T_C= 25°C, 1ms

600

SSOA

V_GE= 15V, T_VJ= 125°C, R_G= 1Ω

I_CM= 160

G = Gate

E = Emitter

= Collector

(RBSOA)

Clamped Inductive Load

V_CE< 0.8 • V_CES

Tab = Collector

T_SC

V_GE= 15V, T_J= 125°C,

(SCSOA)

R_G= 5Ω, V_CE= 1250V, Non-Repetitive

μs

P_C

T_C= 25°C

735

T_J

-55 ... +150

150

°C

Features

T_JM

T_stg

^zHigh Blocking Voltage

^zLow Switching Losses

^zHigh Current Handling Capability

^zAnti-Parallel Diode

-55 ... +150

T_L

T_SOLD

Maximum Lead Temperature for Soldering

1.6 mm (0.062 in.) from Case for 10

300

260

°C

M_d

F_C

Mounting Torque (TO-264 )

Mounting Force (PLUS247 )

1.13/10

20..120/4.5..27

Nm/lb.in.

N/lb.

Advantages

Weight

TO-264

PLUS247

^zHigh Power Density

^zLow Gate Drive Requirement

Symbol

Test Conditions

Characteristic Values

(T_J= 25°C, Unless Otherwise Specified)

Min.

2500

3.0

Typ.

Max.

Applications

BV_CES

V_GE(th)

I_C= 1mA, V_GE= 0V

I_C= 4mA, V_CE= V_GE

^zSwitch-Mode and Resonant-Mode

Power Supplies

^zUninterrupted Power Supplies (UPS)

^zCapacitor Discharge Circuits

^zLaser Generators

5.0

I_CES

V_CE= 0.8 • V_CES, V_GE= 0V

50 μA

T_J= 125°C

6 mA

I_GES

V_CE= 0V, V_GE= ± 25V

±200 nA

V_CE(sat)

I_C= I_C110, V_GE= 15V, Note 1

2.5

3.1

3.0

T_J= 125°C

DS99832B(08/11)

12 3 4 5 6 7

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